Apparatus for substantially uniform fluid flow rates relative to a proximity head in processing of a wafer surface by a meniscus

ABSTRACT

Conditioning fluid flow into a proximity head is provided for fluid delivery to a wafer surface. An upper plenum connected to a plurality of down flow bores is supplied by a main bore. The down flow bores provide fluid into the upper plenum, and a resistor bore is connected to the upper plenum. The resistor bore receives a resistor having a shape so as to limit flow of the fluid through the resistor bore. A lower plenum connected to the resistor bore is configured to receive fluid from the resistor bore as limited by the resistor for flow to a plurality of outlet ports extending between the lower plenum and surfaces of the head surface. Fluid flowing through the upper plenum, the resistor bore with the resistor and the lower plenum is substantially conditioned to define a substantially uniform fluid outflow from the plurality of outlet ports, across the width of the proximity head.

CLAIM OF PRIORITY

This application claims the priority of U.S. Provisional Application No.61/065,088, filed on Feb. 8, 2008, and titled “Apparatus forSubstantially Uniform Fluid Flow Rates Relative To A Proximity Head inProcessing Of A Wafer Surface By A Meniscus”. This application isincorporated herein by reference in their entireties for all purposes.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is related to U.S. application Ser. No. 10/261,839,filed Sep. 30, 2002, issued on Jun. 26, 2007 as U.S. Pat. No. 7,234,477and entitled “METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR WAFERSURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITYTO THE WAFER SURFACES”; and U.S. application Ser. No. 10/330,843, filedDec. 24, 2002, issued as U.S. Pat. No. 7,198,055, on Apr. 3, 2007, andentitled “MENISCUS, VACUUM, IPA VAPOR, DRYING MANIFOLD”; and U.S.application Ser. No. 10/330,897, filed Dec. 24, 2002, issued as U.S.Pat. No. 7,240,679, on Jul. 10, 2007, and entitled “SYSTEM FOR SUBSTRATEPROCESSING WITH MENISCUS, VACUUM, IPA VAPOR, DRYING MANIFOLD”; and U.S.patent application Ser. No. 11/552,794, filed on Oct. 25, 2006, andentitled “APPARATUS AND METHOD FOR SUBSTRATE ELECTROLESS PLATING”; andU.S. patent application Ser. No. 12/340,394, filed on Dec. 19, 2008, andentitled “Methods Of Configuring A Proximity Head That Provides UniformFluid Flow Relative To A Wafer”, which applications are incorporatedherein by reference.

BACKGROUND

1. Field of the Invention

The present invention relates generally to wafer wet clean processes andto equipment for processing wafers, and more particularly to apparatusfor promoting uniform fluid flow relative to a proximity head inprocessing of a surface of a wafer by a meniscus.

2. Description of the Related Art

In the semiconductor chip fabrication industry, it is necessary to cleanand dry a wafer (e.g., a substrate) after a fabrication operation if,e.g., the operation leaves unwanted residues on surfaces of thesubstrate. Examples of such a fabrication operation include plasmaetching and chemical mechanical polishing (CMP), each of which may leaveunwanted residues on surfaces of the substrate. Unfortunately, if lefton the substrate, the unwanted residues may cause defects in devicesmade from the substrate, in some cases rendering the devices inoperable.

Cleaning the substrate after a fabrication operation is intended toremove the unwanted residues. After a substrate has been wet cleaned,the substrate must be dried effectively to prevent water or otherprocessing fluid (hereinafter “fluid”) remnants from also leavingunwanted residues on the substrate. If the fluid on the substratesurface is allowed to evaporate, as usually happens when droplets form,residues or contaminants previously dissolved in the fluid will remainon the substrate surface after evaporation and can form spots and causedefects. To prevent evaporation from taking place, the cleaning fluidmust be removed as quickly as possible without the formation of dropletson the substrate surface. In an attempt to accomplish this, one ofseveral different drying techniques may be employed such as spin-drying,IPA, or Marangoni drying. All of these drying techniques utilize someform of a moving liquid/gas interface on a substrate surface, which,only if properly maintained, results in drying of a substrate surfacewithout the formation of droplets. Unfortunately, if the movingliquid/gas interface breaks down, as often happens with all of theaforementioned drying methods, droplets form, droplet evaporationoccurs, and contaminants remain on the substrate surface.

In view of the foregoing, there is a need for improved cleaningapparatus that provides efficient substrate cleaning while reducing thelikelihood of contaminants remaining on the substrate surface from driedfluid droplets.

SUMMARY

Broadly speaking, embodiments of the present invention fill the aboveneed by conditioning fluid flow that is relative to a proximity head inprocessing of a surface of a wafer by a meniscus. The need is filled byconfiguring the proximity head in one piece so that fluid may beintroduced into the proximity head for delivery to the wafer surface,and fluid may be introduced into the proximity head from the surface ofthe wafer, and head rigidity is maintained even as the head islengthened to enable cleaning of wafers with larger diameters. Theproximity head may have a head surface with a plurality of flatsurfaces. With the plurality of flat surfaces configured for placementin a substantially parallel orientation with respect to the surface ofthe wafer, fluid flowing in a main flow in the head for delivery to thewafer surface is substantially conditioned to define a substantiallyuniform fluid outflow from a plurality of outlet ports to the wafersurface. With the plurality of flat surfaces in that orientation, fluidflowing in separate flow paths from a plurality of inlet ports toanother main flow in the head is substantially conditioned to define asubstantially uniform fluid inflow into the inlet ports from the wafersurface. The need is further filled by the proximity head that isconfigured to maintain head rigidity by a one-piece configuration thatdefines the main fluid flows and defines separate flows of fluidrelative to the wafer surface. The flows to and from the wafer surfacedefine a meniscus extending to the surface of a wafer. The separateflows are in fluid transfer flow paths, both into the inlet ports andfrom the outlet ports. Each of these flows is at a flow rate that issubstantially uniform relative to flow rates in the other paths.

To provide the conditioned flows from and into the head, the proximityhead is configured with many structures according to low tolerances, andwith a reduced number of structures that are configured according tohigh tolerances. A structure according to high tolerances includes aflow resistor unit configured in the head to provide a highest flowresistance path between the main fluid flow and the respective pluralityof inlet and outlets ports. One highest flow resistance flow pathreceives separate flows that are in fluid transfer flow paths into theinlet ports. From another highest flow resistance flow path there areseparate flows in fluid transfer flow paths that exit the outlet ports.The fluid conditioning by the respective flow resistor unit renders eachof the respective inlet port and outlet port flows of the fluid at arate that is substantially uniform relative to flow rates in the otherrespective paths. The structures configured according to the hightolerance are thus effective to render the respective flows of the fluidsubstantially uniform across the length of the head even though theother structures of the head are configured according to the lowtolerances.

It should be appreciated that the present invention can be implementedin numerous ways, including as an apparatus or a system. Severalinventive embodiments of the present invention are described below.

In one embodiment, apparatus is provided for conditioning fluid flowingrelative to a surface of a proximity head in meniscus processing of awafer surface. The apparatus may be configured from a one-piece block,the block being configured with a length extending across an entireextent of the wafer surface. For a fluid transfer unit, the block mayinclude a main fluid transfer bore configured generally parallel to thehead surface across the block length. For the unit, the block may alsoinclude a resistor unit extending across the block length and configuredbetween the main bore and the head surface to impose a resistance on thefluid flowing relative to the head surface (e.g., into or out of ports)between the main bore and the head surface. For the fluid transfer unit,the block may also include a first plurality of bores and a secondplurality of bores. Such bores may be referred to as a plurality ofarrays of fluid transfer units. Each such array extends only in a fluidtransfer direction. These plurality of arrays consist of (i.e., onlyinclude) a first set of fluid transfer bores and a second set of fluidtransfer bores. The first set is represented by the first plurality ofbores, and the second set is represented by the second plurality ofbores. Bores of the first set are open to and between the main bore andthe resistor unit. Bores of the second set are open to and between theresistor unit and the head surface so that the resistor unit of the unitsubstantially conditions the fluid flowing relative to the head surfaceand flowing between the main bore and the head surface and all acrossthe wafer surface.

In one other embodiment, an apparatus may include structure forconditioning fluid flow introduced into a proximity head for delivery toa surface of a wafer. The proximity head has a head surface with aplurality of flat surfaces, the plurality of flat surfaces beingconfigured for placement in a substantially parallel orientation withrespect to the surface of the wafer. The apparatus may include a maininlet bore configured to initially receive a fluid to be provided to theproximity head. The main inlet bore extends along a length of theproximity head. A plurality of down flow bores having first ends areconnected to the main inlet bore. The plurality of down flow bores arespaced apart from each other along the length of the proximity head. Anupper plenum may be connected to second ends of the plurality of downflow bores. Each down flow bore provides a feed of the fluid into theupper plenum, the upper plenum extending along the length of theproximity head. A resistor bore may extend along the length of theproximity head and be connected to the upper plenum. The resistor boremay be configured to receive a resistor, the resistor having a shape soas to limit flow of the fluid through the resistor bore. A lower plenumextends along the length of the proximity head and may be connected tothe resistor bore, the lower plenum being configured to receive fluidfrom the resistor bore as limited by the resistor. A plurality of outletports is defined along the length of the proximity head and extendbetween the lower plenum and the flat surfaces of the head surface.Fluid flowing through the upper plenum, the resistor bore with theresistor and the lower plenum is substantially conditioned, and from ahighest flow resistance flow path in the resistor bore there areseparate flows in fluid transfer flow paths from the outlet ports. Thefluid conditioning by the flow resistor bore and resistor renders theoutlet port flows of the fluid at a rate that is substantially uniformrelative to flow rates in the flows from the other paths of the outletports.

In another embodiment, a proximity head is provided for defining a mainfluid flow and separate flows of fluid. The separate flows are in flowpaths relative to a plurality of flat surfaces to define a meniscusextending to a surface of a wafer. The separate flow in each flow pathis at a rate that is substantially uniform relative to flow rates in theother paths. The plurality of flat surfaces may be configured forplacement in a substantially parallel orientation with respect to thesurface of the wafer. A block may extend in a direction of the lengthand in a fluid transfer direction perpendicular to the length directionand in a width direction perpendicular to the length and fluid transferdirections, the block defining the plurality of flat surfaces. A mainbore may be configured in the block to initially receive a main fluidflow, the main bore extending along the length of the proximity head. Aplurality of separate flow bores is configured in the block and havingfirst ends connected to the main bore, the plurality of separate flowbores being spaced apart from each other along the length of the mainbore and having second ends. An upper plenum may be configured in theblock and connected to the second ends of each of the separate flowbores to transfer the fluid flow relative to the separate flow bores. Aresistor may be configured with a bore extending in the block along thelength of and intersecting the upper plenum, the resistor being furtherconfigured with a flow restrictor received in the resistor bore todefine at least one tortuous path for fluid flow relative to the upperplenum. A lower plenum may be configured in the block with an open topextending in the length direction to transfer fluid relative to thetortuous fluid flow path, the lower plenum extending in the fluidtransfer direction from the open top to a series of fluid outlets spacedacross the length direction. A plurality of outlet ports may beconfigured in the block, one outlet port being connected to eachrespective fluid outlet for transferring one of the separate flows ofthe fluid relative to the head. The fluid flow through the tortuous pathrenders the flow in each outlet port flow at a rate that issubstantially uniform relative to flow rates of the flows in the otheroutlet ports.

In another embodiment, a proximity head is provided for providing aplurality of fluid transfer units. Each unit provides a main fluid flow,and provides separate flows of fluid relative to a surface of a wafer.The units cooperate to define a meniscus extending from the proximityhead to the wafer surface so that the separate flows of the fluidrelative to the surface of the wafer are substantially uniform in eachrespective unit across a length of the proximity head. A block definesthe proximity head extending in a length direction across the wafersurface and in a fluid transfer direction and in a head width direction,the block being configured with a first of the fluid transfer units. Thefirst unit includes a main bore configured in the block to transfer amain flow of fluid, the main bore extending along the head length. Anupper plurality of flow channels extends in the block in the fluidtransfer direction and having first ends in fluid communion with themain bore, the upper channels being spaced across the head length andhaving second ends. An upper plenum is configured in the block andconnected to the second ends of each of the flow channels to transferfluid. The main bore and the upper plurality of flow channels areconfigured to separate the main flow directly into a total number ofseparate flow paths that are between the main bore and the upper plenum.A resistor unit is configured with a resistor bore extending in theblock in the length direction to restrict transfer of fluid in the fluidtransfer direction relative to the upper plenum. A lower plenum isconfigured with an open top extending along the head length in fluidcommunication with the resistor unit, the lower plenum being furtherconfigured extending in the fluid transfer direction from the open topto a series of fluid transfer ports spaced evenly across the headlength. The resistor unit is further configured with a resistive insertreceived in the resistor bore for defining a thin flow path around theinsert to resist fluid flow relative to the upper plenum and relative tothe lower plenum. A plurality of fluid transfer ducts is configured inthe block extending in the fluid transfer direction, one duct beingconnected to each respective fluid transfer port for providing one ofthe separate flows of the fluid relative to the surface of the wafer,the separate flow of the fluid relative to each fluid transfer ductbeing substantially uniform with respect to all of the other separateflows of the fluid provided by all of the other fluid transfer ducts ofthe unit. The plurality of fluid transfer ducts and the upper pluralityof flow channels define the only separate flows in the block that aresolely in the fluid transfer direction.

In still another embodiment, a method for making a proximity head foruse in delivering fluids to a surface of a semiconductor wafer isdisclosed. The method includes: (a) forming a first block from a plasticmaterial, the first block extending a length that is at least as largeas a diameter of the semiconductor wafer; (b) forming a main bore in thefirst block, the main bore being aligned with the length; (c) forming aplurality of upper intermediate bores in the first block, the pluralityof upper intermediate bores being substantially perpendicular to themain bore and having a first ends connected to the main bore; (d)forming a resistor bore in the first block, the resistor bore beingalong the length and parallel to the main bore, the resistor bore beingcoupled to the plurality of upper intermediate bores at second ends, theresistor bore configured to receive a resistor for impeding andcondition a flow of fluid introduced into the main bore; (e) forming aplurality of lower intermediate bores in the first block, the pluralityof lower intermediate bores having first ends connected to the resistorbore; (f) forming a fusing surface on the first block, the fusingsurface exposing second ends of the plurality of lower intermediatebores; (g) forming a second block with a fusing surface, the secondblock having delivery bores that communicate with the second ends of theplurality of lower intermediate bores of the first block; and (h) fusingthe first and second fusing surfaces of the first block and secondblock, the second block having a proximity surface that is opposite thefusing surface, such that the proximity surface is configured to beplaced in proximity to a surface of the semiconductor wafer forsubstantially even flow of fluid across the length.

It should be understood, however, that the method operations need not beperformed in this particular order, and some steps may by combined.Additionally, the method steps of forming can take on many well knownmechanical operations, such as shaping, machining, cutting, drilling,carving, hogging-out, sanding, polishing, melting, heating, aligning,etc., and the like.

Other aspects and advantages of the invention will become apparent fromthe following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the principles ofthe invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the followingdetailed description in conjunction with the accompanying drawings, andlike reference numerals designate like structural elements.

FIG. 1A is a perspective view of an embodiment of the present inventionshowing apparatus including proximity heads for meniscus processing of awafer, in which the apparatus and the wafer are moved relative to eachother;

FIG. 1B is a plan view taken on line 1B-1B in FIG. 1A showing an upperone of the proximity heads, illustrating flow conditioning units;

FIG. 1C is a cross-sectional view taken on line 1C-1C in FIG. 1B,showing an underside of an upper one of the proximity heads,illustrating an exemplary embodiment of the present invention in whichthe fluid conditioning units are configured in the proximity heads;

FIG. 1D is a plan view similar to FIG. 1B showing an upper one of theproximity heads, illustrating a complete set of flow conditioning units;

FIG. 1E is an end view of the fluid conditioning units shown in FIG. 1D,showing main bores and resistive units extending through one end of oneof the proximity heads;

FIG. 2A is a cross-sectional view of the fluid conditioning units shownin FIG. 1E, showing the main bores and the resistive units connected toother bores to supply fluids to and receive fluids from the meniscus;

FIG. 2B is a cross-sectional view taken on line 2B-2B in FIG. 2A,showing an exemplary configuration of one flow conditioning unitextending in a direction of a wafer surface;

FIG. 3A is a cross-sectional view similar to FIG. 2A, showing theaddition of resistors into the flow conditioning units to substantiallycondition fluids flowing in the units;

FIG. 3B is an enlarged view of one of the resistors shown in FIG. 3A,illustrating the resistor configuration of a return flow conditioningunit that cooperates with another unit at an end of the head;

FIG. 4A is a cross-sectional view taken on line 4A-4A in FIG. 3A,showing an exemplary configuration of one return flow conditioning unitthat may be partially surrounded by the unit shown in FIG. 3B;

FIG. 4B is a cross-sectional view taken on line 4B-4B in FIG. 4A,showing an exemplary configuration of the return flow conditioning unitof FIG. 4A, illustrating an exemplary rectangular cross-section of theresistor of this unit;

FIG. 4C is an end view of the exemplary configuration of the return flowconditioning unit of FIG. 4A;

FIG. 4D is a plan view of the configuration of the resistor of thereturn flow conditioning unit shown in FIG. 4A;

FIG. 5A is a cross-sectional view taken on line 5A-5A in FIG. 3A,showing an exemplary configuration of one supply flow conditioning unit;

FIG. 5B is a cross-sectional view of the resistor of the unit shown inFIG. 5A, showing an exemplary circular configuration of the resistor ofthis unit;

FIG. 5C is an end view of the exemplary configuration of the resistor ofthe supply flow conditioning unit of FIG. 5A;

FIG. 5D is a perspective view of the configuration of the resistor ofthe supply flow conditioning unit shown in FIG. 5A;

FIG. 6A is a cross-sectional view taken on line 6A-6A in FIG. 3A,showing an exemplary configuration of another embodiment of a supplyflow conditioning unit;

FIG. 6B is a cross-sectional view of the resistor of the unit shown inFIG. 6A, showing an exemplary rectangular configuration of the resistorof this supply unit with a recessed surface facing incoming fluid flow;

FIG. 6C is an end view of the exemplary configuration of the resistor ofthe supply flow conditioning unit of FIG. 6A;

FIG. 7A is a cross-sectional view of the resistor of the return unitshown in FIG. 3A that cooperates with another unit at an end of thehead, showing a by-pass bore that applies low pressure to the other unitvia by-passing the resistive aspects of the resistor;

FIG. 7B is a cross-sectional view of the proximity head, illustratingthe return unit shown in FIG. 7A and the other unit at the end of thehead, showing a configuration of the end unit to promote uniformity oflow pressure applied to ports of the other unit;

FIG. 7C is a plan view of the two cooperating units shown in FIG. 7B,illustrating the end unit turning a corner and having the low pressureapplied via the by-pass bore;

FIG. 8A is an enlarged view of another embodiment of a resistor,illustrating a cross-section of an open cell porous material; and

FIG. 8B is an enlarged view of a portion of the open cell porousmaterial of FIG. 8A, illustrating the material defining tortuous flowpaths.

DETAILED DESCRIPTION

Several exemplary embodiments are disclosed, which define examples ofconditioning fluid flow in a proximity head. The examples relate tofluid transfer relative to the head, and in one example fluid isdelivered to a surface of a wafer, and in another example fluid isreceived from a wafer surface. In these examples, head rigidity ismaintained even as the head is lengthened to enable cleaning of wafershaving large diameters. Also in these examples, the proximity head isconfigured to maintain head rigidity by a one-piece head configuration,while defining a main fluid flow and defining separate flows of fluidrelative to the wafer surface. To provide the conditioned flows from andinto the head, the proximity head is configured with many structuresconfigured according to low tolerances, and with reduced numbers ofstructures configured according to high tolerances. A structureconfigured according to high tolerances includes a flow resistor unitconfigured in the head to provide a highest flow resistance path betweenthe main fluid flow and the respective plurality of inlet and outletsports. With respect to a respective highest flow resistance flow path,there are separate flows in fluid transfer flow paths, e.g., into theinlet ports or from the outlet ports. For fluid conditioning, with ahead surface configured for placement in a substantially parallelorientation with the wafer surface, fluid flowing in the head for thefluid transfer is substantially conditioned, and as a result the flowrate of the flow into each inlet port, and the flow rate from eachoutlet port, is enabled to be substantially uniform relative to the flowrates in the other respective inlet or outlet ports that are across theincreased length of the head.

Several inventive embodiments of the present invention (herein referredto as “embodiments”) are described below. It will be apparent to thoseskilled in the art that the present invention may be practiced withoutsome or all of the specific details set forth herein.

The word “wafer,” as used herein, denotes without limitation,semiconductor substrates, hard drive disks, optical discs, glasssubstrates, flat panel display surfaces, liquid crystal displaysurfaces, etc., on which materials or layers of various materials may beformed or defined in a processing chamber, such as a chamber in which aplasma is established for processing, e.g., etching or deposition. Allsuch wafers may be processed by the embodiments in which improvedcleaning systems and methods provide efficient wafer cleaning whilereducing the likelihood of contaminants remaining on the wafer surfacefrom dried liquid droplets.

Orientation of the wafer (and of structures) is described herein interms of orthogonal X, Y and Z axes. Such axes may define directions,such as directions of surfaces or of movements or of planes, etc.

The word “fluid”, as used herein, refers to liquids and gases.

The word “meniscus,” as used herein, refers to a volume of liquidbounded and contained in part by surface tension of the liquid. In theembodiments, the meniscus in a contained shape can be moved relative toa surface. The “surface” may be a surface of a wafer (“wafer surface”),or a surface of a carrier (“carrier surface”) that mounts the wafer, forexample. The term “W/C surface” refers collectively to the wafer surfaceand the carrier surface. A desired meniscus for meniscus processing isstable. The stable meniscus has a continuous configuration. Thisconfiguration is continuous completely across a desired width (see WHbelow, FIG. 1A) in the X direction and across a desired length (see LM,FIG. 1A) in the Y direction and the meniscus extends continuously acrossa desired gap in the Z direction (FIGS. 1A & 1C). In specificembodiments, the meniscus may be established to be stable in thiscontinuous configuration by the delivery of liquids to the W/C surfacewhile also removing the liquids from the W/C surface. The removal may beby applying reduced pressure to the meniscus, and is referred to as“return”.

The term “proximity head”, as used herein, refers to an apparatus thatcan receive liquids, apply the liquids to the W/C surface, and removethe liquids from the W/C surface, when the proximity head is placed inclose relation to the W/C surface. The close relation is when there is asmall (e.g., 0.5 mm) gap between (i) a carrier surface (or the wafersurface) and (ii) a surface (“head surface”) of the proximity head thatapplies the meniscus to the W/C surface. Thus, the head is spaced by thegap from the W/C surface. In one embodiment, the head surface is placedsubstantially parallel to the wafer surface and substantially parallelto the carrier surface. In one embodiment the proximity head isconfigured to supply a plurality of liquids to the gap and is alsoconfigured with vacuum ports for removing the supplied liquids.

The term “placed in close relation to” refers to “proximity” of the headsurface and the W/C surface, the proximity being defined by the gap. Thegap is a proximity distance measured in the Z direction. Differentdegrees of proximity are possible by adjusting the relative Z directionpositioning of the carrier and the head surface. In one embodiment,exemplary proximity distances (gaps) may be between about 0.25 mm andabout 4 mm, and in another embodiment may be between about 0.5 mm andabout 1.5 mm, and in a most preferred embodiment the gap may be about0.5 mm.

By controlling the delivery to, and removal of the liquids from, themeniscus, the meniscus can be controlled and moved relative to the W/Csurfaces. During the processing the wafer may be moved, while theproximity head is still. The head may also be moved while the waferremains still. Further, for completeness, it should be understood thatthe processing can occur in any orientation, and as such, the meniscusmay be applied to W/C surfaces that are not horizontal (e.g., carriersor wafers that are at an angle to horizontal). A preferred embodiment isdescribed in which: (i) the wafer is moved by the carrier in the Xdirection, (ii) a desired orientation of the W/C surfaces is horizontaland parallel to the head surface (i.e., in an X-Y plane), (iii) theproximity head is still, (iv) the length LH of the head surface extendsin the Y direction across the W/C surface and is passed by the carrierand wafer moving parallel to the X direction, (v) the head surface andthe W/C surface are spaced by a desired gap having a uniform value(i.e., uniform in the Z direction across the entire X and Y directionextents of the gap), and (vi) the meniscus is stable and extends in acontinuous configuration (i.e., without separation) across the gap andthus extends continuously in each of the X, Y & Z directions across thegap.

The term “recipe” refers to computer data, or information in other form,that defines, or specifies, (1) process parameters for a desiredmeniscus process to be applied to the wafer; and (2) physical parametersrelated to establishing the gap. For the liquid or liquids that definethe meniscus, the process parameters can include the type of liquid, andthe pressures, flow rates and chemical properties of the liquid. For themeniscus, the process parameters can include the size, shape andlocation of the liquid meniscus.

The word “chemistry”, as used herein, refers to a particular combinationof the fluids specified by the recipe for meniscus processing of a giventype of wafer; and involves physical and chemical properties of suchfluids and of the materials from which the meniscus processing apparatusis fabricated. Generally, for a particular type of wafer, a specificchemistry is specified by the recipe for the meniscus processing. Inturn, the configuration of the meniscus processing apparatus must becompatible with that specific chemistry.

The word “tolerance”, as used herein, may be understood as relating to“configuring” the proximity head, or to how the head is “configured”, asdescribed below. In one example, a “nominal dimension” is an ideal,exact dimension to be achieved by the configuring. When a specificationfor a configured feature (or structure) requires only the nominaldimension to be achieved, the configured feature is said to be“according to” a “zero tolerance”. In another example, the configuredfeature may be specified to require achievement of either (i) the“nominal dimension”, or (ii) a dimension somewhat different from theexact nominal dimension. The difference between the nominal (or exact)dimension and the permitted different dimension, is referred to as a“tolerance”. When the tolerance is limited to small amounts ofdifference the tolerance is said to be “high”; is generally difficult,or expensive, to achieve; and the configuring is said to be “accordingto a high tolerance”. When the tolerance is less limited, and thespecification permits larger amounts of difference the tolerance is saidto be “low”; is generally easier, or less expensive, to achieve; and theconfigured feature (or structure) is said to be “according to a lowtolerance”. Such “high” tolerances may be expressed in terms of apercentage, for example. The percentage may be defined by the smallamount of the difference divided by the nominal dimension. Such “low”tolerances may also be expressed in terms of a percentage, for example.The percentage may be defined by the larger amount of the differencedivided by the nominal dimension. When many high tolerances arespecified, the configured features (or structure(s)) are said to be“according to high tolerances”. When many low tolerances are specified,the configured features (or structure(s)) are said to be “according tolow tolerances”. In other examples, the dimension to be configured maybe a diameter of a hole or bore, or a length of a piece, or a direction.The same criteria apply to a nominal one of such dimensions, and to thelow and high tolerances relating to such dimensions.

Design Considerations

Analysis by the Applicants of the present invention indicates that oneproblem in the use of a recipe-controlled meniscus defined between theproximity head and the W/C surface to be processed may be overcome bythe embodiments. The problem is the trend in semiconductor chipmanufacturing to use wafers having greater and greater diameters. Forexample, the diameters have ranged from the early 25.4 mm diameterthrough much iteration to the later 200 mm diameter that in 2007 isbeing displaced by 300 mm diameter wafers, and in 2007 predictions arefor use of a 450 mm diameter, e.g., by 2013. When the proximity headspans a Y direction distance more than the wafer diameter, and when thewafer diameter becomes larger and larger, the meniscus length LD mustbecome longer and longer in the Y direction so as to process the entirewafer in one relative motion between the proximity head and the wafer.The analysis also indicates that the problem relates to a desire toincrease throughput of wafers processed by such a meniscus, e.g., toincrease the speed of movement of the wafer relative to the proximityhead during meniscus processing. With increases in both meniscus lengthand the relative speed, such Applicants have identified the uniformityof the flow rate of fluids that define such a meniscus as being relatedto obtaining desired results of the meniscus processing. The analysis bysuch Applicants indicates needs for a system for conditioning fluidflow, e.g., for flow introduced into a proximity head for delivery to asurface of a wafer and for flow of fluid removed from the wafer surfaceinto the proximity head.

This analysis by such Applicants indicates that the need forconditioning fluid flow may be filled by a proximity head configured inone piece, yet configured to define flow paths that (i) introduce fluidinto the proximity head for delivery to the wafer surface, and (ii)remove fluid from the surface of the wafer. The need is filled forexemplary flows into the head via one fluid transfer unit, byconfiguring the head so that in each of many flow paths of the unit intothe head there is substantially the same flow rate across the length ofthe head. Also, such configured head still maintains head rigidity evenif the head is lengthened for cleaning of wafers with larger and largerdiameters. To provide the conditioned flows from and into the head, thisanalysis by these Applicants also indicates that the head should beconfigured to increase the number of head structures that are configuredaccording to low tolerances, and to limit, or reduce, the number of headstructures that are configured according to high tolerances. Also, thestructure configured according to high tolerances should be limited toperforming fluid conditioning.

Structure Configurations

With the above design considerations in mind, reference is now made toexemplary structure configurations for filling the above and otherneeds, which will enable obtaining desired results of the meniscusprocessing notwithstanding (i) increases in both (a) wafer diameter(thus meniscus and head length increases) and (b) head-to-wafer relativespeed, and (ii) limitations imposed by the chemistry that may bespecified by the recipe for a particular meniscus processing. In a flowconditioning unit, the desired results to be obtained providesubstantial uniformity of the flow rate of fluids that are relative tothe unit. Thus, in one example, the flow rate of the flow into eachinlet port of one fluid transfer unit is enabled to be substantiallyuniform relative to the flow rates in the other inlet ports of the unitthat are spaced across the increased length of the head. In each casethe substantial uniformity must be across the length of the proximityhead. Also, in each fluid transfer unit the configuring according to thehigh tolerances is limited to one high resistance flow path and to flowpaths adjacent to the one high resistance flow path, including one flowpath leading to a fluid transfer surface of the proximity head. Thisconfiguring is effective to render the respective flow rates of thefluid relative to the fluid transfer surface substantially uniformacross the length of the head that is opposite to the wafer, even thougha plurality of other structures of the one fluid transfer unit areconfigured according to the low tolerances.

FIG. 1A shows apparatus 100 for meniscus processing of a wafer 102, inwhich the apparatus 100 and the wafer 102 are moved relative to eachother. Each of two opposite sides, or surfaces, 104 of the wafer may beprocessed by a separate proximity head 106. Exemplary relative movementis shown in which the proximity heads are stationary and the wafer 102is moved past the proximity heads 106 (arrow 107). The heads 106 areshown straddling the wafer 102 such that the wafer sides 104 areprocessed at the same time. The above-described problems arising fromincreases in the wafer diameter D may be understood in that the heads106 are illustrated as extending completely across and past the waferdiameter D. Thus, as the wafer diameter D increases, the length LH ofthe heads 106 must be increased. For reference, the head length LH isshown in a Y axis direction. An upper head 106U is shown above a lowerhead 106L and is shown spaced in a Z axis direction from the lower head106L. The exemplary movement 107 of the wafer 102 past the heads 106 isshown as movement in an X axis direction. Each head 106 is configured toestablish a meniscus 108 that spans a gap 110 between the respectivehead to the respective surface 104. The increases in the length LHincrease the structural rigidity required for the head 106 to span thelength LH without sagging, for example. Sufficient structural rigidityis required to maintain the gap 110 uniform across that length LH. Themeniscus 108 extends in the three X, Y and Z directions. Thus, FIG. 1Ashows the meniscus 108 extending from the upper head 106U in the Zdirection to an upper wafer surface 104U. The meniscus is also shownhaving a length LM extending completely across and past the wafer 102 inthe Y direction. Looking down on the heads 106, the upper surface 104Uof the wafer 102 is shown. A width WH of the upper head 106U and a widthWM of the meniscus 108 are shown, with both widths extending in the Xdirection.

FIG. 1B is a view looking upwardly, from just above the meniscus 108 andonto one embodiment of the upper head 106U, illustrating an exemplaryarrangement, or network, 113 of fluid conditioning units, or channels,114. In the network 113 each exemplary fluid conditioning unit 114extends in a row 116 in the Y direction of the length LH of the head106. For reference, the diameter D of the wafer 102 is also indicated.Exemplary embodiments of the units 114 are identified as units 114-1 &114-2 (see brackets indicating extent of the units). The unit 114-1 isshown extending in a row 116 partly across the length LH of the head106, and extending beyond the diameter D of the wafer 102, and is asupply unit as described below. Unit 114-2 extends similarly, but is areturn unit as described below. To enable the head 106 to establish themeniscus 108 that spans the gap 110 between the respective head 106 andthe respective surface 104, the units 114-1 & 114-2 are shown configuredwith ports, or fluid transfer ports, 121 each in an exemplary circularconfiguration through which fluid is transferred to establish themeniscus 108. Fluid is either supplied to the head 106 and through andout of the ports, referred to as outlet ports 121O, or the fluid isdrawn through and into the ports 121, referred to as return ports 121R,and is drawn into the head 106. Still generally, to promote a stablemeniscus the units 114 are configured so that fluid flowing for deliveryto the wafer surface 104, and fluid flowing for collection from thewafer surface, is “substantially conditioned”. In detail, theconfiguration of the units 114 is such that the fluid is “substantiallyconditioned” for each type of fluid flow of the respective unit 114,i.e., supply and return. Fluid that is substantially conditioned in theunit 114 of the head 106 is characterized by uniform fluid flow rates intwo respects: (i) uniform outflow rates from the plurality of outletports 121O, e.g., of a row 116 of the supply unit 114-1 to the wafersurface 104, and (ii) uniform inflow rates from the wafer surface 104into the plurality of return ports 121R, e.g., of a row 116 of thereturn unit 114-2. Whether the flow rates of the fluid through each ofthe ports 121 of the one unit 114-1 or 114-2 are “uniform” is determinedas described below. “Uniformity” of the flow rates through the ports 121of one unit 114 is defined by three factors. Supply unit 114-1 is usedas an exemplary unit in describing uniformity. One factor, average flowrate (“AFR”), is composed of the total flow rate (“TFR”) through allports 121 of the exemplary unit 114-1 (e.g., in ounces per minute), andthe TFR is divided by the number of ports 121 in the exemplary unit114-1. A second factor is the value of the maximum flow rate through anyof the ports 121 in the exemplary unit 114-1, and is identified as“MAX”. The third factor is the value of the minimum flow rate throughany of the ports 121 in the exemplary unit 114-1, and is identified as“MIN”. Uniformity (“U”) is based on these three factors as follows:U=[MAX−MIN/AFR]×100  [Equation 1]

In a general sense applicable to supply of gas and liquid by anexemplary unit 114-1, and to return via a vacuum by an exemplary unit114-2, a “uniform” flow rate through each port 121 of the exemplary unit114 is indicated by a zero value of Equation 1. Fluid having this zerovalue of Equation 1 has been “conditioned”, i.e., has been ideallyconditioned in the unit 114-1. Also in a general sense applicable tosupply of gas and liquid by an exemplary unit 114-1, and to return via avacuum by an exemplary return unit 114-2, fluid having a value ofEquation 1 other than zero, and as described below, is said to have been“substantially conditioned”. The value of Equation 1 in the rangesdescribed below indicates that the flow rate of such fluid flowingthrough each such port 121 of the unit 114-1 is substantially uniformrelative to the flow rates of fluid flowing in all of the other ports121 of the exemplary unit 114-1.

More specifically, the range of values of Equation 1 corresponding toflow rates that are “substantially uniform” through each port 121 of theexemplary unit 114, is determined with respect to the fluid that isbeing transferred by that unit. For example, in one embodiment of areturn unit 114 in which a vacuum applied to the head 106 induces thereturn, the value of Equation 1 (i.e., uniformity) was determined to beabout 6%, which compares to about 14% in a return head 106P describedbelow. For such return unit 114 of an embodiment, flow rates that aresubstantially uniform may have a value of Equation 1 in a range fromabout 9% to about 4%, for example. As another example, in one embodimentof a supply unit 114 of an embodiment in which N2/IPA was supplied tothe head 106, the value of Equation 1 (i.e., Uniformity) was determinedto be about 3%, which compares to about 5% in a supply head 106P usedfor the same N2/IPA and described below. For such supply unit 114 of anembodiment, flow rates that are substantially uniform may have a valueof Equation 1 in a range from about 2% to about 4%, for example. Asanother example, in one embodiment of a supply unit 114 in which waterwas supplied to the head 106, the value of Equation 1 (i.e., Uniformity)was determined to be about 0.7%, which compares to about 3% in a supplyhead 106P used for water as described below. For such supply unit 114 ofan embodiment, flow rates that are substantially uniform may have avalue of Equation 1 in a range from about 0.5% to about 2%, for example.The heads 106P noted above were not configured as embodiments, and hadthe following characteristics: (a) many levels of branches in which amain plenum branched into a few flow paths, and each of the few flowpaths branched into a small number of flow paths, and those flow pathsagain branched in a similar manner; (b) the flow paths were eachconfigured according to a high tolerance; (c) four or more separatepieces of the head were required to enable configuration of the manyseries of branches of the flow paths; and (d) the separate pieces wereheld together by fasteners.

Other aspects of the configuration of the units (or channels) 114 may beinitially understood from FIGS. 1A-1C. In combination these Figures showthe head 106 configured as a one-piece block, or polyhedron, 122. Theblock 122 may be one solid, three-dimensional piece having, or bound by,many faces 124. Generally, FIG. 1A shows the one-piece block 122extending (i) in the Y direction of the head length LH; and (ii) in theZ, or fluid flow, or delivery or return, direction perpendicular to thehead length direction Y; and (iii) in a width direction WH (thedirection X) perpendicular to the Y and Z directions. An exemplary block122 may be configured as a rectangular parallelepiped. Other exemplaryblocks 122 may be configured with faces 124 arranged as may be requiredfor the functions performed by the various units 114. In one embodiment,the block 122 is defined by the faces 124 that are a plurality ofmutually perpendicular exterior faces 124.

Referring also to the cross-sectional view of FIG. 1C, the upper head106U is shown with one bottom face 124B, and in use such face isoriented opposite to the wafer surface 104 for the processing. Face 124Bmay be composed of flat surfaces 126. One top face 124T is opposite tothe bottom face 124B. FIG. 1B shows opposite side faces 124S1 and 124S2define the head length LH. FIG. 1C shows one front face 124F is firstpassed by the wafer 102 as the wafer approaches (arrow 107) the head 106for processing, and one rear face 124R is passed by the wafer as thewafer leaves the head 106 after processing. Exemplary values of the gapmay be about 0.70 mm. from one flat face 126 near the front face 124Fand about 0.78 mm. from another flat face 126 near the other face 124R(FIG. 1C).

In a preferred embodiment, the block 122 of each head 106 is fabricatedfrom a material having high strength properties capable of spanning thewafer 102 as required to enable the flat surfaces 126 to remain spacedfrom the wafer surface 104 within a moderate range of gap values. A morepreferred embodiment is provided when the material from which the block122 is configured is required to: (i) have the highest strengthproperties capable of spanning the wafer 102 as required to enable theflat surfaces 126 to remain properly spaced from the wafer surface 104;(ii) be compatible with meniscus processing chemistry in which thefluids include N2 and IPS and water; and (iii) provide a narrowest rangeof uniformity of fluid flow rates, and thus the desired substantialuniformity as defined above. This more preferred embodiment isconfigured with the block 122 of each head 106 fabricated from one pieceof the material described below. In this more preferred embodiment, theexemplary materials may be poly vinylidine di-fluoride (PVDF), orethylene-chlorotrifluoroethylene (ECTFE) such as that sold under thetrademark Halar.

FIG. 1C, a cross-sectional view, shows that in one embodiment (of unit114-2) the fluid may be transferred in a plurality of fluid transferflow paths 128 that are open to the ports 121. The fluid transfer flowpath 128 shown is thus of the exemplary unit 114-2, and unit 114-2 isshown extending in the Z direction. As described above, in that unit114-2 the flow in one such path 128 (e.g., each path 128 that is acrossthe diameter D of the wafer 102), is at a flow rate that is“substantially uniform” (as defined above) relative to flow rates in theother paths 128 of the same exemplary unit 114-2. That is, the flow ratein each path 128 of the unit 114-2 that is opposite to the diameter D ofthe wafer 102, is at a flow rate that is substantially uniform relativeto the flow rates in the other paths 128 of the unit 114-2 that are alsoopposite to the diameter D of the wafer 102.

Another embodiment may be understood by reference to FIG. 1D. FIG. 1D isa view looking upwardly at this embodiment from just above the meniscus108 and onto the upper head 106U, also illustrating an exemplaryarrangement, or network, 113-2 of fluid conditioning units, or channels,114. In FIG. 1D, embodiments of the units 114 are identified as units114-1 through 114-14. For clarity of illustration, the ports 121 of theunits 114 are shown as dots or small circles, but are as describedbelow. Each such unit 114-1 through 114-10 extends in one of the rows116 partly across the length LH of the head 106 and extends beyond thediameter D of the wafer 102. In the embodiments of the unit 114identified as units 114-2 and 114-10, each of these units extends in arow 116 further across the length LH of the head 106, beyond thediameter D of the wafer 102, and beyond the units 114-3 through 114-9.In the network 113, unit 114-2 is also shown joining units 114-11 and114-12 that extend in the X direction in a column (see line 118). Unit114-10 is also shown joining units 114-13 and 114-14 that also extend inthe X direction in the column (see line 118). The respective joinedunits 114-2, 114-11 & 114-12, and 114-10, 114-13, and 114-14, combine tosurround, and to define an enclosure 120 around, the inner units 114-2through 114-8. A last of the exemplary arranged units 114 is shown asthe unit 114-1 extending outside of the enclosure 120, in the Ydirection of the length LH of the head 106, in a row 116.

FIG. 1E shows an elevation view of one embodiment of end 124S1 of theblock 122. As compared to the cross-sectional view of FIG. 1C (thatshows the units 114 extending in the Z direction within the block 122),less structure of the units 114 extends through the block 122 to the end124S1. The Z extent of a representative unit is shown in FIG. 1E bybracket 114-1. Other units are identified without a bracket, and extendsimilarly in the Z direction. As described above, some of the units 114may be configured, for example, with the outlet ports 121O. These unitsmay be referred to as fluid supply conditioning units. FIG. 1Eidentifies these units as: 114-1-O, 114-3-O, 114-5-O, 114-7-O, and114-9-O, and all supply liquid to the meniscus 108. Also, the othersunits 114 may be configured, for example, with the return ports 121R.These units may be referred to as fluid return conditioning units. FIG.1E identifies these units as: 114-2-R, 114-4-R, 114-6-R, 114-8-R, and114-10-R, and all draw fluid into the head 106. The ports 121 combine toestablish and maintain the meniscus 108 extending relative to the wafer102 as described above.

As illustrated by the rows 116 of ports 121 shown in FIG. 1D, the units114 also extend into the block 122 from the face 124S1. Each of theunits 114 is the same, except as described below with respect to length,location and configuration in the block 122, proximity to corners 130(FIG. 1D) of the block, proximity to a face 124S1 or 124S2, or theparticular function performed (fluid supply or return), for example. Asa preface to describing one unit 114 as representing the commonconfiguration of all of the units 114, reference is again made to face124S1 shown in FIG. 1E. The face 124S1 is shown configured with theexemplary ten units 114-1 through 114-10, here also identified by a “-O”or a “-R” as noted above. Each such unit 114-1 through 114-10 includes amain bore 132 that extends through the face 124S1 and into the block 122in the Y direction, with a few representative bores 132 identified. FIG.1E shows an exemplary spaced arrangement of the ten exemplary bores 132,which is staggered and extends in the X direction. Main bore 132-1 isshown near the rear face 124R and main bore 132-10 is shown near thefront face 124F. For clarity of illustration, other main bores 132-2through 132-9 that are between bores 132-1 and 132-10 are not separatelyidentified. The bores 132-1, 132-3, 132-5, 132-7, & 132-9 may bereferred to as main outlet bores in that they supply the outlet ports121O. The bores 132-2, 132-4, 132-6, 132-8, & 132-10 to 132-14, may bereferred to as main return bores in that they cause return flow into thereturn ports 121R. Generally, a desired fluid is introduced into each ofthe main outlet bores 132-1, 132-3, 132-5, 132-7, & 132-9. Stillgenerally, each of the respective units 114-1-O, 114-3-O, 114-5-O,114-7-O, & 114-9-O is configured so that fluid flowing from therespective main outlet bore 132 for delivery to the wafer surface 104 issubstantially conditioned, wherein the conditioned fluid provides thesubstantially uniform fluid outflow from the plurality of respectiveoutlet ports 121O of the respective rows 116 of the units 114-1-O,114-3-O, 114-5-O, 114-7-O, & 114-9-O to the wafer surface 104.

Similarly, it may be understood that a low pressure is applied to eachof the main return bores 132-2, 132-4, 132-6, 132-8, & 132-10 through110-14. Still generally, each of the respective units 114-2-R, 114-4-R,114-6-R, 114-8-R, & 114-10-R through 114-14-R is configured so thatfluid flowing, or drawn, into the respective return ports 121R of eachsuch unit from the wafer surface 104 is substantially conditioned, andis at a substantially uniform fluid flow rate.

Still describing the common configuration of all of the fluidconditioning units 114, face 124S1 shown in FIG. 1E also illustratesanother aspect of the configuration of the exemplary fluid conditioningunits 114-1 through 114-10. Each such unit is shown including a resistorunit 133. Each unit 133 extends through the face 124S1 and into theblock 122 in the Y direction. FIG. 1E shows an exemplary spacedarrangement of the exemplary resistor units 133, which is also staggeredand extends in the X direction. The resistor units 133 are spaced in theZ direction from the main bores 132. Resistor unit 133-1 is shown nearthe rear face 124R and resistor unit 133-10 is shown near the front face124F. For clarity of illustration, other resistor units 133-2 through133-9 that are between resistor units 133-1 and 133-10 are notseparately identified. Generally, a resistor unit 133 is configured forthe function (i.e., outlet or return) of the respective fluidconditioning unit 114.

FIG. 2A is a cross section of the block 122 taken as shown in FIG. 1D,illustrating the cross sectional configuration of the exemplary flowconditioning units 114, including the respective resistor units 133, ofthe embodiment of FIGS. 1D & 1E. Main outlet bores 132-1, 132-3, 132-5,132-7 and 132-9 alternate with main return bores 132-2, 132-4, 132-6,132-8 and 132-10. Resistor units 133-1, 133-3, 133-5, 133-7, & 133-9alternate with resistor units 133-2, 133-4, 133-6, 133-8 & 133-10, withfive units 133-1, 133-2, 133-8, 133-9 & 133-10 being identified bybrackets. The units 133 are shown schematically in FIGS. 2A and 3A, withdetails being described below.

FIG. 2B is an elevation cross section view taken in FIG. 2A through theblock 122, showing an exemplary one of the flow conditioning units 114,which is unit 114-8, that may be designated 114-8-R configured forreturn. Generally, the cross-sectional configuration of an outlet unit(e.g., 114-3-O) is similar to that shown in of FIG. 2B, such that thefollowing description applies to the outlet units, except as noted. Themain return bore 132-8 is shown at the top of the unit 114-8-R, andextends in the Y direction from the face 124S1 along unit length LU to ablind end 132B. For the return of FIG. 2B, the main return bore 132-8 isconfigured to initially receive the applied low fluid pressure, and lowpressure is to be applied by the unit 114-8-R to the return ports 121R(or 121-8-R) of the unit 114-8-R. For clarity of illustration, the fluidis not shown. Length LU of the main return bore 132-8 extends in theblock 122 along part of the length LH (FIG. 1A) of the proximity head.

Generally, FIGS. 2A & 2B show a plurality of vertical fluid flow bores134 having first ends 136 that are connected to the main return bores132. For the unit 114-8, the plurality of vertical fluid flow bores134-8 extend in the block 122 spaced from each other along the length LUand thus along part of the length LH of the proximity head 106. In theunit 114-8 and the related units 114-2, 114-4, 114-6, and 114-10, thebores 134 may be configured with an oval shape, in which the oval of abore 134 extends to a greater extent in the Y direction of the boresthat are further from the face 124S1. FIGS. 2A and 2B show an upperplenum 138-8 connected to second ends 140-8 of the plurality of bores134, so that each vertical fluid flow bore 134-8 applies the low fluidpressure to the upper plenum 138-8. FIG. 2B shows the upper plenum 138-8extending in the block 122 similar to the main return bore 132-8. InFIG. 2A, a resistor bore 142-8 of resistor unit 133-8 is shown in theblock 122 and connected to the upper plenum 138-8. The resistor bore142-8 is configured to receive a resistor 144-8 (see FIG. 4A forresistor 144-8 in bore 142-8 and extending in the Y direction). In theview of FIG. 3A the resistor 144-8-R is also shown in the bore 142-8. Inthe resistor unit 133-8, the resistor 144 is identified by 144-8 (or144-8-R). Generally, each resistor 144 has a shape configured to limitflow of the fluid through the respective resistor bore 142, and theresistor 144 extends in the block 122 in the resistor bore 142 to ablind end 142B (FIG. 2B). FIGS. 2B and 3A show a lower plenum 146-8 inthe block 122. The lower plenum 146-8 extends parallel to the main bore132-8 and is connected to the resistor bore 142-8. The lower plenum146-8 receives low pressure applied from the resistor bore 142-8 aslimited by the resistor 144-8. A plurality of fluid transfer bores 148-8(or 144-8-R) is defined in the block 122. The bores 148-8 are spacedsimilar to the vertical fluid flow bores 134-8, and extend in the Zdirection between the lower plenum 146-8 and the flat surface 126 of thebottom face 124B. At the face 124B, each bore 148-8 terminates at arespective one of the fluid transfer ports (e.g., a return port) 121-8-R(FIG. 2B). The rows 116 in FIG. 1B are illustrated in FIG. 2B by thebores 148-8 terminating at the fluid transfer ports 121-8-R (some ofwhich are shown schematically as dots in FIG. 1D).

Still generally, in reference to FIG. 3A, in operation applicable to allof the return units 114R (i.e., 114-2, 114-4, 114-6, & 114-8), as aresult of the low pressure applied to the main return bore 132-8-R ofthe exemplary unit 114-8-R, fluid flowing from the return ports 121-8through the lower plenum 148-8, the resistor bore 142-8 (in which theresistor 144-8 is received), and the upper plenum 138-8 to the mainreturn bore 132-8, is substantially conditioned to define thesubstantially uniform fluid inflow rate into the plurality of returnports 121-8-R of unit 114-8-R from the meniscus 108. The substantiallyuniform fluid inflow rate is as described above, and may be furtherunderstood from FIG. 2B in which a plurality of the return ports 121-8-Rare shown spaced along the head 106 (along length LU) and correspond tounit 114-8. The substantially uniform fluid inflow rate from the gap 110into each of the plurality of return ports 121-8-R of the one unit114-8-R is as described above with respect to the units 114 and theports 121.

Referring again to FIG. 2A, the exemplary one of the flow conditioningunits 114 was described above as the exemplary return unit 114-8-R. Itwas also noted above that, generally, the cross-sectional configurationof an outlet unit (e.g., 114-3-O) is similar to that shown for thereturn unit 114-8-R in FIG. 3A. Referring to FIG. 2A, the followingdescription applies to exemplary outlet units 114 of the exemplarynetwork 113. These outlet units are identified in FIG. 2A as theexemplary units 114-3-O, 114-5-O, 114-7-O, and 114-9-O. For thisdescription of the outlet function, general reference numbers (withoutthe “−#”) are also used in reference to FIG. 2B.

Main bore 132 at the top of the unit 114 is a main outlet bore 132, andis configured to initially receive fluid under high pressure, such as anexemplary supply of water, to the outlet ports 121O (e.g., of unit114-3). The exemplary fluid flows from the main outlet bore 132 and isdivided and flows into the vertical flow bores 134 for flow to theresistor bore 142 in which the resistor 144 is received. As describedbelow, the flow of the fluid through the resistor bore 142 is limited bythe resistor 114 and as limited the fluid flows into the lower plenum146 and then into the plurality of fluid transfer bores 148 and theninto and through the plurality of fluid transfer (outlet) ports 121.

The flow rates of the fluid through the outlet ports 121 of theexemplary unit 114 are substantially uniform as defined above, in whichthe substantial uniformity is relative to the ports 121S of one unit 114all across the diameter of the wafer. With the above-described overviewof the flow conditioning units 114, reference is made in more detail toFIG. 3A, and to FIG. 3B, that are described below in reference to fluidflow through all embodiments of the units 114. FIG. 3B is an enlargedview of unit return 114-2 shown in FIG. 3A. FIGS. 3A & 3B are describedwith respect to structure that is configured common to all of the units114, thus the “−#” are not used in this description. The configurationof each of the respective upper and lower plenums 138 & 146 and of theresistor unit 133 is with a cross-section related to a same longitudinalaxis (e.g., the Z axis). The resistor bore 142 is configured with walls152. The upper plenum 138 and the lower plenum 146 and the resistor bore142 are respectively configured so that in combination the respectivecross-sections define a “cross-shaped cross-section”, or “cross-shapedbore configuration”, 157.

The cross-shaped resistor configuration is characterized by: (i) theplenums 138 and 146 being upright along the Z axis, (ii) the resistorbore 142 being between the plenums 138 and 146, and (iii) the resistorbore 142 extending transversely (parallel to the X axis) relative to theZ axis and transversely beyond the upright plenums 138 and 146. Thus,the resistor bore 142 extends to the left in FIG. 3B beyond one leftvertical line 158L of the plenums 138 and 146. Similarly, the resistorbore 142 extends to the right in FIG. 3B beyond one right vertical line158R of the plenums 138 and 146.

Generally, FIG. 3B illustrates the: (a) cross-shaped bore configuration157, and (b) a cross-sectional resistor shape, or configuration, of theresistor 144 within the resistor bore 142 of the cross-shaped boreconfiguration 157 of exemplary return unit 114-2. Features (a) and (b)are common to all of the units 114. The exemplary resistor 144 shown inthese Figures extends transversely relative to the upright plenums 138and 146 and is separated by a transverse resistive flow space, or slit,160 from walls 152 of the resistor bore 142. Ribs 161 (shown enlarged inFIG. 3B) extend from the resistor into contact with the walls 152. Ribs161 center the resistor 144 in the bore 142 and thus maintain thetransverse resistive flow space 160 at a selected value all around alongitudinal axis R of the resistor 144 (also referred to as 144-8).Axis R extends in the Y direction. Generally, the resistive flow space160 is shown defining a tortuous flow path (see arrow 162 in FIG. 3B).The tortuous flow path 162 extends from the upper plenum transversely ofthe Z axis past line 158R and then in the Z direction and thentransversely toward the Z axis into intersection with the lower plenum146. Still referring generally to FIG. 3B, with the cross-shaped boreconfiguration 157, there is a configuration of the resistor 144 with abarrier surface 164 extending transversely, then parallel, then oppositetransversely, all relative to the Z axis and conforming to the tortuouspath (arrow 162).

Referring FIG. 4A (that is oriented oppositely to FIG. 2B), a generalfurther description of the resistor 144 is as follows. The resistor bore142 is shown extending from the blind end 142B to an open end at theface 124S1. The resistor 144 is inserted into the bore 142 until theresistor 144 touches the blind end 142B. FIG. 4A shows that a resistorlength LR plus a length LP of a plug, or retainer, 166 equals a lengthLRB of the resistor bore 142. For proper functioning of a given resistorunit 133, only one plug 166 of a set of plugs and only one resistor 144of a set of resistors of the network 113 are proper for that function.To be proper, not only must the combined lengths LP and LR equal thelength LRB of the bore 142, but a tab 168 must fit into a slot 170adjacent to the end of the bore 142.

With the length of the resistor 144 in mind, reference is made again toFIG. 3B, and to the: (a) cross-shaped bore configuration 157, and (b)cross-sectional shape of the resistor 144 within the resistor bore 142of the configuration 157. It may be understood that features (a) and (b)of one flow conditioning unit 114 combine to provide a highestresistance to fluid flow of the flow structure that is between the mainbore 132 and the ports 121. The highest resistance to fluid flowresulting from the features (a) and (b) is along the tortuous path 162,as described above, such that the initial flow in the Z direction fromthe main bore 132, or from the ports 121 and the lower plenum 146, istransformed into transverse flow away from the Z axis before returningto axial flow parallel to the Z axis. The highest resistance to fluidflow is thus applicable to both the outlet units (e.g., 114-3-O) and thereturn units (e.g., 114-8-R). For example, as a result of this highestresistance to fluid flow, the initial fluid flow in the main outlet bore132 in the outlet units (e.g., in units 114-1, 114-3, 114-5, 114-7, &114-9) is decoupled from the respective fluid flow in the lower plenum146 and in the fluid transfer bores 148 of outlet unit 114-3. In theother return unit example, also as result of this highest resistance tofluid flow, the initial fluid flow in the fluid transfer bores 148 ofthe return units (e.g., units 114-2, 114-4, 114-6, 114-8, & 114-10) isdecoupled from the respective fluid flow in the main bore 132. In eachof the outlet and return units, this highest resistance and decouplingresults even when the various bores 132 and 134, are configuredaccording to relatively “low” tolerances, as defined above. In oneembodiment, each of the + and − percentages may be about 1.149%, forexample, such that the variation from nominal may be within a range ofabout 2.3%. Also, when a gun drill is used to configure the bores 132,for example, there may be a deviation of the center of the bore 132 froma most desired location of the center of the bore 132. Such deviationmay occur as the bore 132 is drilled from the face 124S1 toward and tothe blind end 124B of bore 132 (FIG. 2B). Such deviation may be referredto as “walkout” or “runout”, and may be defined in terms of whether theactual center of the bore 132 is within or outside of a circle. Suchcircle has a walkout center that coincides with the most desiredlocation of the center of the bore 132. The radius of the circle may bea percentage of the nominal diameter of the bore 132. In one embodimentthe radius may be about 2.298%. As another example, the “low” tolerancefor the diameter of the vertical bore 134 may be a + or a − percentageof the diameter of the bore 134. In one embodiment, each of these + and− percentages for the bore 134 may be about 2.5%, for example.

It may be understood that a usually disadvantageous result of the lowtolerance is that the actual dimension of the respective bore (e.g., 132or 134) may vary from nominal by the full amount of the percentage,e.g., by the full larger amount of the above-described difference. Also,for example, the flow rate of the fluid in those respective bores mayvary widely. One unacceptable, high-cost way to overcome this usuallydisadvantageous result of the low tolerance is to configure all of thebores and plenums according to “high” tolerances, as defined above. Inthe embodiments, the configuration of the cross-shaped cross-section157, in conjunction with the configuration of the fluid transfer bores148, overcomes the usually disadvantageous result of those lowtolerances. In detail, without using the costly high tolerances for allof the bores of each of the units 114, and by limiting use of hightolerances to the plenums 138 & 146 & to the resistor units 114 andbores 148, the units 114 achieve the desired substantially uniform fluidflow rates relative to the proximity head 106 even though those variousbores 132 and 134 are configured according to the low tolerances, andeven though the block 122 is a one-piece block.

As an example of limiting the use of high tolerances, the “high”tolerance for the dimensions of the resistor bore 142 may only be a +percentage of the dimension of bore 142, with no − percentage. Inembodiments of the bore 142 (e.g., as shown in FIG. 2A as 142-2 and142-10), the − percentage may be zero (a zero tolerance), and the +percentage may be about 1.2%, for example. In another embodiment of thebore 142 (e.g., as shown in FIG. 2A as 142 in unit 114-3-O), there maybe + and − percentages, with each being about 1.5%, for example.

In addition, the configuration of the resistors 144 for insertion intoand removal from the resistor bore 142 enables substitution of oneresistor for another after completion of the cross-shaped cross-sectionconfiguration 157 of the bore 152 in the block 122. Thus, no adjustmentof the configuration of the completed block 122 need be made in order toachieve the desired substantially uniform fluid flow rates in eachrespective one of the various units 114. Rather, this substitution,coupled with ease of configuring only the one substituted resistor 144,may, e.g., provide the ribs 161 configured to conform to the actual sizeof the completed resistor bore 142. Such configuring of the resistors144 is also facilitated by the suitability of even the more preferredmaterials PVDF and ECTFE (identified above) to be configured in theabove-described cross-sectional shape of the resistor 144 for theabove-described reception in the cross-shaped cross-sectionalconfiguration 157 of resistor bore 142. Further, with the ribs 161engaging the wall 152 of the resistor bore 142, the resistor 144 remainscentered in the bore 142 even though there may be the above-describedwalkout. In one embodiment, with respect to the actual and desiredcenter of the resistor bore 142, advantageously no tolerance is definedfor the walkout of the resistor bore 142.

Additionally, it may be understood that one of the resistors 144 may befurther configured to overcome the results of use of the relatively lowtolerances. For example, the distance in the Y direction between theribs 161 (e.g., see enlarged ribs 161 in FIGS. 4D, 5D,) may be selected,and be selected according to a cross-sectional dimension of the actualresistor bore 142. That cross sectional dimension may be used todetermine cross-sectional dimensions of the resistor 144 betweendifferent pairs of the ribs 161, and thus select the value of the slit160 between the resistor 144 and the bore 142 between those ribs 161.Also, within the one completed block 122 and for one unit 114, from themain bore 132 to the fluid transfer port 121, there is no seal (such asan O-ring) and no fastener is necessary to hold the one-piece block 122together. Rather, the (i) plug 166 in the resistor bore 142, and (ii)the connection of a vacuum line or a fluid supply pipe (not shown) tothe respective main bore 132, are the only openings into the block 122that are sealed.

Other advantages and features of the resistors 144 may be appreciated byreference to the following descriptions of embodiments of the units 114.For example, referring again to FIG. 3A, five exemplary configurationsof the units 114, including the resistor units 133, are shown. Each suchexemplary configuration is characterized by the above-described featuresof the: (a) cross-shaped bore configuration 157, and (b) cross-sectionalshape of the resistor 144 within the resistor bore 142 of theconfiguration 157.

FIG. 3A shows a first of the five exemplary configurations of the units114, embodied in return units 114-4, 114-6, and 114-8 (also identifiedas 114-4-R, etc.). As an example of the first units 114, return unit114-8 is shown in more detail in FIGS. 4A-4D. This description, and thedescription of FIG. 3B in respect to unit 114-8, are also applicable tounits 114-4 and 114-6, with variations being the dimensions of the bore142 and of the resistor 144. Referring to FIGS. 4A & 4B, the resistorunit 133-8 is configured with resistor 144-8 shown having the describedlength LR. The end to be inserted into the bore 142 bears indicia (anumber, e.g., “5”, see FIG. 4D in which the “5” is hidden) indicatingthat the resistors 144 of units 114-4, 114-6, and 114-8 areinterchangeable (in that each bears indicia “5”). The cross section ofFIG. 4B shows the ribs 161 extending around three sides of a rectangularcross-section of the resistor 144-8. The plan view of FIG. 4D shows anenlarged portion of the resistor 144-8, with the ribs 161 extendingoutwardly from one of the three sides of the resistor 144-8. One fourthside is shown in FIGS. 4B and 4D configured without the rib to allowthat side to directly engage one (left, FIG. 4B) wall 152 of the bore142. This configuration thus defines the slit (flow space) 160 andtortuous flow path 162 as shown in FIG. 3B including a section extendingtransversely as described above with respect to FIG. 3B. The end view ofFIG. 4C illustrates the resistor 144-8 with a threaded end bore 172 towhich a threaded tool (not shown) may be secured to facilitate insertionand withdrawal of the resistor 144 to and from the bore 142. A distalend tab 174 is shown for entry into a slot (not shown) at the left endof bore 142 to properly orient the resistor 144-8 in the bore 142.

A second of the five exemplary configurations of resistance unit 133 isshown with respect to FIG. 2A that shows outlet units 114-3, 114-5,114-7, & 114-9. Also, the cross-sectional view of FIG. 3A shows theseunits, FIG. 5A shows an elevation view of one exemplary unit 114-3, andFIGS. 5B & 5D show the resistor 144-3 separately with the ribs 161.Views in FIGS. 5B and 5C show the cross-section of exemplary resistor144-3. Referring to these Figures, the resistance unit 133-3 isconfigured with resistor 144-3 shown having the described length LR(FIG. 5A) that is unique to the outlets as described below. The end tobe inserted into the bore 142-3 bears indicia (a number, e.g., “4”)indicating that the resistors 144 of units 114-3, 114-5, 114-7 and 114-9are interchangeable (in that each bears indicia “4”). The cross sectionof FIG. 5B, and FIG. 5D, show the ribs 161 extending around the circularperimeter of the resistor 144-3. This configuration with the ribs 161thus defines the slit (flow space) 160 (shown in FIG. 3B), and with thecircular cross-sections of resistor 144-3 and bore 142-3, the space 160and tortuous flow path (see arrows 162 in FIG. 5B) extendingtransversely, both to the left and right of the unit axis R. Path 162 iswithin the circle of a rib 162 and outside the exterior of the resistor144-3 between adjacent ones of the ribs 161. End view 5C illustratesresistor 144-3 with a threaded end bore 172 to which a threaded tool(not shown) is secured to facilitate insertion and withdrawal of theresistor 144-3 to and from the bore 142-3.

A third of the five exemplary configurations of resistance unit 133 isshown in FIG. 2A with respect to outlet unit 114-1 and resistance unit133-1. FIG. 3A also shows resistor unit 133-1, and FIGS. 6A-6C showunits 114-1 and 133-1 in detail. Referring to these Figures with respectto exemplary unit 114-1 and resistor unit 133-1, it may be understoodthat the resistance unit 133-1 is configured with resistor 144-1 havingthe described length LR, that is unique to the outlet unit 114-1. Theend to be inserted into the bore 142-1 bears indicia (e.g., number “1”)to distinguish resistor 144-1 of unit 114-1 from the resistors 144 ofall other units 114. FIGS. 6B and 6C show the cross section of resistor144-1, and FIG. 6B shows ribs 161 extending around three sides of therectangular outside of the resistor 144-1. This configuration with theribs 161 thus defines the slit (flow space) 160 (in the manner shown inFIG. 3B) extending transversely to the right of the unit axis R. The endview of FIG. 6C shows resistor 144-1 having a threaded end bore 172 towhich a threaded tool (not shown) may be secured to facilitate insertionand withdrawal of the resistor 144-1 to and from the bore 142-1. Theconfiguration of resistor 144-1 is for supplying N2/IPA to the wafersurfaces 104, and for initiating the transverse flow, a recess 144D isshown in the upper surface.

A fourth and fifth of the five exemplary configurations of resistanceunit 133 are shown in FIG. 2A as respective units 114-2 and 114-10, thatare return units 114-2-R & 114-10-R. Generally, each is similar to thatshown in and described above with respect to FIG. 3A, except as follows.Recall that FIG. 1D was described in terms of the units 114-2 and 114-10extending in a respective row 116 beyond the diameter D of the wafer 102and beyond the units 114-3 through 114-9, and in terms of unit 114-2joining units 114-11 and 114-12 that extend in the X direction in acolumn (see line 118). Unit 114-10 was also shown joining units 114-13and 114-14. Unit 114-2 is one of the five exemplary configurations ofresistance unit 133 in that resistor 144-2 is configured so as to causefluid flow return from return units 114-11 and 114-12 into unit 114-2.Unit 114-10 is one of the five exemplary configurations of resistanceunit 133 in that resistor 144-10 is configured so as to cause fluid flowreturn from return units 114-13 & 114-14. Units 114-2-R & 114-10-R areshown exemplified by unit 114-2-R in FIGS. 3A, 7A & 7B. The descriptionof unit 114-2-R is also applicable to unit 114-10-R, with variationsbeing related to the configuration of the resistors 144 for differentdirections of fluid flow, e.g., from the return units 114-11 and 114-12,and from the return units 114-13 & 114-14. Referring to FIG. 7A, theresistance unit 133-2 is configured with resistor 144-2 shown having thedescribed length LR. FIG. 7A shows opposite ends 176 (at the left) and178 (at the right). Between the ends 176 & 178 the resistor 144-2 isconfigured with the ribs 161 in the manner shown in FIG. 3B, and FIG. 4D(e.g., there for the resistor 144-8). In the manner shown in FIG. 3B,the body of the resistor 144-2 cooperates with the walls 152 of the bore142-2 to define the flow space 160. The end 176 to be inserted into thebore 142-2 bears indicia (a number, e.g., “2” for resistor 144-10, and anumber “3” for resistor 144-10) indicating that the resistor 144 of unit114-2 is unique with respect to units 114-11 and 114-12, and that theresistor 144 of unit 114-10 is unique with respect to units 114-13 and114-14.

Referring generally to FIG. 7A, each of the resistors 144-2 and 144-10is configured at the respective ends 176 & 178 to apply low pressure to,and thus draw fluid flow from a respective two of the respective units114-11 & 114-13 (from ends 178), and 114-12 & 114-14 (from ends 176). Inmore detail, the units 114-11 & 114-12 extend in the X directionone-half way across the head 106 between faces front face 124F and rearface 124R. These units cooperate with unit 114-2 that is adjacent to therear face 124R, and thus cooperate with resistor 144-2. In FIG. 7A, ends176 & 178 are illustrated showing each with an end return (or by-pass)bore 180, bore 180L being at the left end 176 and bore 180R being at theright end. In the view of FIG. 7A (that is reversed from the view ofFIG. 1D), the end return bore 180L is shown flaring outwardly towardface 124S2. Referring to FIG. 1D, the end return bore 180L also flaresin the X direction toward the front face 124F in view of the extensionof the unit 114-11 toward the front face. Also, in FIG. 7A the endreturn bore 180R flares outwardly toward opposite face 124S1, & alsoflares in the X direction toward the front face 124F in view of theextension of the unit 114-11 toward the front face 124F.

In a similar manner but adjacent to front face 124F, unit 114-10cooperates with the units 114-13 & 114-14 that extend in the X directionone-half way across the head 106 between front face 124F and rear face124R. These units cooperate with resistor 144-10. Based on FIG. 7A, itmay be understood that the end return bore 180L of unit 114-10 alsoflares in the X direction toward the rear face 124R in view of theextension of the unit 114-14 toward the rear face. It may also beunderstood that the end return bore 180R of unit 114-10 flares outwardlytoward opposite face 124S1, & also flares in the X direction toward therear face 124R in view of the extension of the unit 114-13 toward therear face 124R.

The cooperation of the unit 114-2 with units 114-11 & 114-12, and thecooperation of units 114-10 with units 114-13 & 114-14, may be furtherunderstood by reference to FIG. 1D. There, for example, the ports 121 inthe row 116 of unit 114-2 (that extend in the Y direction) are shownjoining the ports 121 in the columns 118 of units 114-11 & 114-12 (thatextend in the X direction). The joining is at curved corner 130. Theapplication of low return pressure to the ports 121 of units 114-11 &114-12 is facilitated by the resistor 144-2 (FIG. 7A) configured withthe end return bores 180L & 180R that flare as described above. Also,the ports 121 in the row 116 of unit 114-10 (that extend in the Ydirection) are shown joining the ports 121 in the columns 118 of units114-13 & 114-14 (that extend in the X direction). The joining is atcurved corner 130. The application of low return pressure to the ports121 of units 114-13 & 114-14 is facilitated by the resistor 144-10configured with the end return bores 180L and 180R as described above.

Referring to FIG. 1D, the section line for FIG. 7B extends alongexemplary units 114-14 and 114-12 near the face 124S2. A section lineextending along exemplary units 114-13 and 114-11 near the face 124S2would show similar structure. Reference is made to FIGS. 7B & 7C for adescription applicable to both structures of units 114-2 and 114-10.Resistor unit 133-2 is shown in FIG. 7B with resistor bore 142-2connected to lower plenum 146-2. The resistor 144-2 is not shown. Thesection of FIG. 7C is taken through unit 114-2, & also shows unit114-12. The resistor bore 142-2 ends and does not join the unit 114-12.Also, the upper plenum 138-2 ends and does not join unit 114-12. Theresistor 144-2 is also shown ending adjacent to the end of the resistorbore 142-2. The lower plenum 146-2 is shown merging with a curved returnfeed passage 182-12 of unit 114-12. The curved return feed passage182-12 curves around the curved corner 130 and merges with a straightreturn passage 184-12 that extends in the X direction. FIG. 7B shows thepassage 184-12 extending, or sloping, diagonally downwardly as itextends away from the corner 130. Recall that the lower plenum 146-2 hasthe low pressure applied to it by the resistor unit 144-2 after theabove-described highest resistance has been imposed on the fluid flow tothe main bore 132-2, and that only at the ends 176 and 178 has the lowpressure been applied to the lower plenum 146-2 directly via the by-passbores 180L and 180R. As a result of: (a) the lower plenum 146-2 being inopen communication with the exemplary straight return passage 184-12(via the curved return passage 182-12; and (b) this action of theby-pass bore 180L, the fluid flow rates in the fluid transfer bores148-12 tend to be balanced with the fluid flow rates in the fluidtransfer bores 148-2. In FIG. 7B, passage 184-12 is shown above the row118 of the fluid transfer bores 148-12 of the unit 114-12, and is thusabove the ports 121-12 that are at the ends of those bores 148-12. InFIG. 7B the column 118 of fluid transfer bores 148-12 of unit 114-12 isshown open to the straight return passage 184-12.

In review, it may be appreciated that the configuration of the end 176of the resistor 144-2 (with the end return bore 180L) is different fromthe above-described tortuous flow path 162, and the by-pass bore 180Lflares toward the face 124S2. As a result, the end return bore 180L thatextends through the end 176 of the resistor 144-2 by-passes the tortuousflow path 162 that extends to the lower plenum 146-2 of the unit 114-2,and applies the low pressure to the bores 148-12 of unit 114-12. Withthis by-pass effect, the bore 180L does not provide the high resistanceto fluid flow of the flow structure that is between the main bore 132-2and the ports 121-12 of the unit 114-12. Rather, the low pressureapplied by the upper plenum 138 to the resistor bore 142-2 is allowed tobe applied through the end return bore 180L to the curved return feedpassage 182-12 that curves around the curved corner 130 and merges withthe straight return passage 184-12. Passage 184-12 in turn applies thelow pressure to the tops of the bores 148-12. To offset the loss of thehighest resistance, because of the slope of the passages 182-12 and184-12, the length in the Z direction of the fluid transfer bores 148-12is greatest close to the end return bore 180L, and decreases withincreased distance in the X direction from the bore 180L toward the unit114-12. This varying length of the bores 148-12 tends to equalize thelow pressure applied by the bores 148-12 to the ports 121-12. Because ofthe combined resistance to flow in the end return bore 180L and in thefluid transfer bores 148-12, the fluid flow rates into the ports 121-12have an acceptable degree of uniformity, but less uniformity than thesubstantially uniform fluid flow rate into the fluid transfer ports121-2 along the row 116.

The foregoing description of the cooperation of the unit 114-2 with unit114-12 is also applicable to the cooperation of the unit 114-2 with unit114-11, and to the cooperation of unit 114-10 with units 114-13 &114-14. Thus, the varying Z direction lengths of the bores 148-11,148-13, and 148-14 tend to equalize the low pressure applied by therespective bores to the respective ports 121-11, 121-13, and 121-14, andbecause of the combined resistance to flow in the respective end returnbores 180L and 180R, and in the respective fluid transfer bores 148, thefluid flow rate into the respective ports 121 of columns 118 has anacceptable uniformity approaching the substantial uniformity withrespect to the fluid flow rate into the fluid transfer ports 121 alongthe rows 116.

Ease of configuring the one-piece proximity head 106 may be understoodby reference to FIGS. 1C & 3A. Initially, the configuring may beunderstood by reference to the above-identified U.S. Provisional patentapplication Ser. No. 61/008,856, filed on Dec. 20, 2007, and entitled“Methods Of Configuring A Proximity Head That Provides Uniform FluidFlow Relative To A Wafer,” that has been incorporated by reference. Anunderstanding of such methods of configuring may be had be reference toFIG. 1C that shows the one-piece block 122 with a fused region 196(identified by rows “xxxx . . . ”), shown including sections 196-1 and196-2, each extending in the X direction and intersecting the lowerplenum 146-2 of the depicted unit 114-2. The sections 196-1 and 196-2initially extend along mating surfaces 122AM and 122BM of separate parts122A and 122B of the block 122. Surfaces 122AM & 122BM are identified bya line 122AM/122BM in FIGS. 1C & 3A. Line 122AM identifies the matingsurface of part 122A. Line 122BM identifies the mating surface of part122B. It is to be understood that those surfaces 122AM and 122BM becomefused as the fused region 196 is formed (or configured) as describedbelow. In more detail, those parts 122A and 122B are joined by fusingthe surfaces 122AM and 122BM of sections 196-1 and 196-2 to form theintegral, one-piece block 122 configured with the fused region 196. FIG.3A shows the block 122 configured with the two parts 122A and 122B, andfor clarity of illustration a line 196 identifies the fused region 196.To facilitate configuring the units 114 in the block 122, the parts 122Aand 122B are initially separate, are configured with the above-describedrespective portions of the units 114 while separate, and are then joined(fused) to define the one block 122 as a one-piece block configured withthe fused region 196. First section 122A extends along the length LH(FIG. 1B) of the proximity head 106, and is configured with the face124S1 extending perpendicular to the length LH of the head 106 (in the Xand Z directions). The inner mating surface 122AM is a first matingsurface extending perpendicular to the face 124S1 and to the oppositeface 124S2. First mating surface 122AM is a plane defining theseparation of the sections 122A and 122B, prior to the joining by thefusing. Referring generally to the units 114, the first section 122A isshown in FIG. 3A configured with the main inlet bore 132. A bore isshown in FIG. 7A for a plug 166 that leads to the resistor bore 142(FIG. 1C). Bores 132 and the plug bore extend through the first end124S1. FIG. 3A shows the part 122A also configured with upper plenum138, and with a portion 200 of the lower plenum 146 extending from thefirst mating surface 122AM. With this configuration of the first blocksection 122A, access to the inside of the first part 122A may be hadthrough the first mating surface 122AM for machining. For example, forunits 114-1, 114-2, 114-4, 114-6, 114-8 and 114-10, machining by arouter may configure the upper plenum 138, the portion 200 of the lowerplenum 146, and the resistor bore 142, all extending in the Y direction.Through the portion 200 and through the resistor bore 142 and throughthe upper plenum 138, access may then be had to define (e.g., drill) thevertical flow bores 134 into intersection with the main inlet bore 132.Also, for the units 114-2 and 114-10, the above-described passages 182and 184 shown in FIG. 7B may be machined through the mating surface122AM.

To complete configuration of the first section 122A, units 114-3, 114-5,114-7, and 114-9 may be configured. Initially, a gun drill may be usedto enter the block 122A via the face 124S1 and configure the resistorbores 142. The bores 142 are configured as shown in FIG. 5A to the blindend 142B. Referring to FIG. 5A, and considering the exemplary resistor144-3 removed from the bore 142, the configuration of the exemplaryresistor unit 133-3 may be understood. The upper plenum 138-3 is shownabove the resistor bore 142-3, and the lower plenum 146-3 is shown belowthe bore 142-3. Each plenum 138 & 146 is shown in sections 208 spaced bya bridge 210. To configure the separate sections, a tool (not shown) maybe extended through the mating surface 122AM and through the resistorbore 142-3 to a suitable depth (at the intended top of the upper plenum138-3). The tool is moved in the Y direction just short of a desiredlocation of a next bridge 210. The tool is withdrawn through the matingsurface 122AM, and is indexed by an amount of the Y direction thicknessof the bridge 210. The tool is again used to configure a next section208, and other sections 208. Upon configuring the bore for the plug 166,that may have a diameter larger than that of the resistor bore 142, theconfiguring of one part of one unit 114 (the part in the part 122A) iscomplete. It may be understood that the configuration of the variousunits 114 spaces the units as shown in FIG. 2A, for example.

It may be understood that ease of manufacture of the block 122 may alsobe by configuring the second part 122B, that extends along the length LHof the proximity head 106. The second part 122B is configured with thesecond mating surface 122BM. The second part 122B is further configuredwith the plurality of flat surfaces 126 parallel to the second matingsurface 122BM. FIGS. 2A, 3A, and 5A show the second part 122B configuredwith a lower portion 220 of the lower plenum 146 extending to the secondmating surface 122BM. This portion of each unit 114 may be configured bya tool (not shown) via the second mating surface 122BM, the tool beingmoved in the Y direction. The second part 122B is further configuredwith the plurality of ports 148 extending from the lower portion 220through one of the flat surfaces 126.

In FIGS. 2A, 3A, 5A, and 7A the first part 122A and the second part 122Bare shown joined at the fused region 196 to hold the first and secondmating surfaces 122AM and 122BM (FIG. 3A) together. The joining is withthe portions 200 & 220 of the lower plenum 146 aligned to define theentire lower plenum 146. Also, as joined, the faces 124S1 of parts 122A& 122B combine and are shown in FIG. 1A identified as the face 124S1,for example. In the same manner the opposite face 124S2 is formed andidentified in FIG. 1A. It may be understood that each of the first andsecond parts 122A and 122B is configured from a single piece of theabove-described material. When joined, as by fusion, the block 122 is asdescribed above, configured to extend in the Y direction over the pathof the wafers 102 for performing the meniscus processing. The one-pieceblock 122 may be further processed to seal the resistor bore 142 at thefirst end 124S1, such as by an O-ring used with the plug 166.

Another embodiment of one unit 114 that may represent a commonconfiguration of all of the units is shown as 114P in FIG. 8A. Theresistor is identified as 144P and is configured with a shape that fillsthe resistor bore 142. The configuration of the resistor bore 142 thatreceives the resistor 144P may comprise a central section 248 (alignedwith the upper plenum 138) and the resistor bore 142 (offsettransversely from the upper plenum 138). The resistor 144P is configuredfrom open cell porous material. FIG. 8B is an end view of a smallportion of the porous material. FIG. 8B illustrates interstices 250through which the limited flow of fluid flows from the upper plenum 138to the lower plenum 146. The resistor 144P, configured with the opencell porous material received in the resistor bore 142, thus provides aplurality of the tortuous paths 154 comprising paths extending in thewidth (X) direction and in the Z direction. The porous material may beself-supporting, and be a bead pack made by PVDF, with a pore size ofabout 500 microns. The interstices 250 of the open cell porous materialdefine the many tortuous flow paths 154 such that the resistor 144P hasa shape so as to limit flow of the fluid through the resistor bore 142to the lower plenum 146. With the lower plenum 146 and the fluidtransfer bores 148 configured in a manner similar to that describedabove, in operation the fluid flowing through the upper plenum 138, theresistor bore 142 (with the resistor 144P) and the lower plenum 146 maybe substantially conditioned (as defined above) to define theabove-described substantially uniform fluid outflow from the pluralityof fluid transfer bores 148 into the gap 110.

In review, the proximity head 106 may be described as being configuredfor defining a main fluid flow and separate flows of fluid. Suchconfiguration may be provided by one or more of the above-describedunits 114. Generally, the units 114 may be selected according to thefunction that the unit is to serve in the head 106. For example, in oneembodiment by the unit 114-2 the main flow of fluid may be a vacuum todefine an outer return, whereas by the unit 114-3 the main fluid flowmay be a supply or delivery of a chemical suited to clean the wafersurface 104. Other examples include a main flow by unit 114-2 that mayapply a vacuum to define another return, and a main flow by a unit 114-3that may supply or deliver DIW suited to provide a source to furtherclean the wafer surface 104. Also, in the embodiment shown in FIG. 1Banother unit 114-1 may supply or deliver a main flow of N2 or IPA toperform a final cleaning of the wafer surface 104 as the wafer 102passes the head 106. In each such unit 114, the main flow is separatedinto separate flows that are relative to the plurality of flat surfaces126 to define the meniscus 108 extending to the surface 104 of the wafer102 so that the separate flow rates are substantially uniform (asdefined above) in the unit 114 across the length LH of the head 106. Asdescribed, the plurality of flat surfaces 126 are configured forplacement in the above-described substantially parallel orientation withrespect to the surface 104 of the wafer 102.

It may also be understood that the separation of the main flow intoseparate flows relative to the meniscus 108 is “direct”, which isdescribed as follows. First, for the supply units, e.g., units 114-1,114-3, 114-5, 114-7, & 115-9, and considering one exemplary unit 114-3,the main fluid transfer bore 132-3 and the vertical fluid flow bores134-3 separate the main flow (in the bore 132-3) directly into a firsttotal number of flow separate paths that are between the main bore 132-3and the upper plenum 138-3. In other words, between bore 132-3 andplenum 138-3, there is no further separation of flow into more flowpaths. Similarly, for the return units, e.g. including units 114-2 &114-10, and considering one exemplary unit 114-2, the vertical fluidflow bores 134-2 separate the main flow from the resistor unit 133-2directly into a second total number of flow separate paths that arebetween the main bore 132-2 and the upper plenum 138-2. In other words,between the bore 132-2 and plenum 138-2, there is no further separationof flow into more flow paths.

Also, on the other side of the exemplary resistor unit 133-3 (i.e.,adjacent to the lower plenum 146-3), there may be a third total-numberof separate flow paths configured between the lower plenum 146-3 and theports 121-3. In other words, between the lower plenum 146-3 and theports 121-3, there is no further separation of flow into more flowpaths. Additionally, on the other side of the exemplary resistor unit133-2 (i.e., adjacent to the lower plenum 146-2), there may be a fourthtotal number of separate flow paths configured between the lower plenum146-2 and the ports 121-2. In other words, between the lower plenum146-2 and the ports 121-2, there is no further separation of flow intomore flow paths.

The first and third totals numbers may be described in terms of anexemplary ratio, in which the third total number divided by the firsttotal number may be less than ten, and in one embodiment may be abouteight, for example. In one embodiment, the first total number may beabout twelve the third total number may be about ninety-eight. Thesecond and fourth total numbers may also be described in terms of anexemplary ratio, in which the second total number divided by the fourthtotal number may be between ten and twenty, and in one embodiment may beabout sixteen, for example. In one embodiment, the second total numbermay be about six and the fourth total number may be about one-hundred.It may be understood that the second and fourth total numbers may bespecified by the recipe for the meniscus processing, and the ratio usedto determine the respective first and third total numbers. In review,the higher ratio requires fewer bores 134, and from the standpoint ofreducing the number of machining operations performed on part 122A, forexample, is preferred.

Additionally, these first and second total numbers of flow paths thatare provided “directly” (i.e., in the above-described manner) areprovided without using the high tolerances for all of the bores of theunits 114. As described, all of bores 132 and 134 are configuredaccording to the low tolerances. Also as described, the configuration ofthe units 114 limits use of high tolerances to the plenums 138 & 146, &to the resistor units 114 and the bores 148. Configuration of the units114 in this manner limiting the use of high tolerances still achievesthe desired substantially uniform fluid flow rates in the bores 148 ofone unit 114 relative to the proximity head 106 even though thosevarious bores 132 and 134 of the one unit 114 are configured accordingto the low tolerances, and even though each such exemplary one unit 114is provided in the one-piece block 122 that has only the one fusedregion 196.

In more review, the apparatus 100 has been described for conditioningfluid flowing relative to the surface 124B of the proximity head 106 inmeniscus processing of the wafer surface 104. The apparatus isconfigured from the one-piece block 122, that is configured with thelength LH extending across the entire extent of the wafer surface (e.g.,diameter D). For a unit 114, the block 122 may include the main fluidtransfer bore 132 configured generally parallel to the head surface 124Bacross the block length (e.g., beyond diameter D). For the unit 114, theblock 122 may also include the resistor unit 133 extending across theblock length and configured between the main bore 132 and the headsurface 124B to impose a resistance on the fluid flowing relative to thehead surface 124B (e.g., into or out of ports 121) between the main bore132 and the head surface 124B. For the unit 114, the block 122 may alsoinclude the plurality of bores 134 and the plurality of bores 148. Suchbores 134 and 146 may be referred to as a plurality of arrays of fluidtransfer units. Each such array may extend only in the fluid transferdirection of the Z axis, as shown in FIG. 2A, for example. Theseplurality of arrays consist of (i.e., only include) a first set of fluidtransfer bores and a second set of fluid transfer bores. The first setis represented by the bores 134, and the second set is represented bythe bores 148. Bore 134 (the first set) are open to and between the mainbore 132 and the resistor unit 133. Bores 148 (the second set) are opento and between the resistor unit 133 and the head surface 124B so thatthe resistor unit 133 of unit 114 substantially conditions the fluidflowing relative to the head surface 124B and flowing between the mainbore 132 and the head surface 124B and all across the wafer surface(i.e., across the entire diameter D).

Further aspects of an embodiment of the apparatus 100 include the mainbore 132 and the resistor unit 133 and the arrays (bores 134 & 148)configured to cause the fluid flow relative to the head surface 124B tobe into the second set of fluid transfer bores (i.e., into bores 148through the ports 121 of the unit 114) and through the resistor unit 133and into the main bore 132. The embodiments of the units 114-3 and 114-5exemplify such flow, for example. Also, the resistance imposed by theresistor unit 133 is a “highest” resistance, and “highest” may berelative to other resistances imposed by the first and seconds sets ofbores (134 & 148) on the fluid flowing in the respective first andseconds sets of bores, the other resistances being less than the highestresistance imposed by the resistor unit.

In addition, in one embodiment the main bore 132 and the resistor unit133 and the arrays (bores 134 & 148) are configured to cause the fluidflow relative to the head surface 124B to be from the main bore 132 intothe first set (bores 134) and through the resistor unit 133 and throughthe second set (bores 148) past the head surface 124B to the wafer 102.The first and second sets of bores impose other resistances on the fluidflowing in the respective first and seconds sets of bores, the otherresistances being less than the resistance imposed by the resistor unit.

Also in review, in one embodiment the total number of bores 134 of thefirst set consists of fewer bores 134 than the total number of bores 148of the second set. In addition, in one embodiment each of the main bore132 and the bores 134 of the first set is configured according to thelow tolerances.

In still further review, the apparatus 100 is described includingstructure (e.g., resistor unit 133) for conditioning fluid flowintroduced into the proximity head 106 for delivery to the surface 104of the wafer 102. The proximity head 106 has the head surface 124B withthe plurality of flat surfaces 126. The plurality of flat surfaces 126are configured for placement in the substantially parallel orientationwith the surface 104 of the wafer 102 (FIG. 1A). The apparatus 100 hasbeen described as configured with units 114, each configured with themain inlet bore 132 configured (as by 132-3) to initially receive afluid to be provided to the proximity head 106. The main inlet bore 132extends along the length LH of the proximity head 106 for a distancecomparable to LR (e.g., FIG. 5A). The units 114 also include theplurality of vertical, or down, flow bores 134 having first ends 136(FIG. 2B) connected to the main inlet bore 132, the plurality of bores134 being spaced apart from each other along the length of the proximityhead 106. The units 114 also include the upper plenum 138 connected tosecond ends 140 of the plurality of down flow bores 134. Each down flowbore provides a feed of the fluid into the upper plenum 138, and theupper plenum 138 extends along the length LH of the proximity head 106.Units 114 include the resistor bore 142 extending along the length LH ofthe proximity head 106 and connected to the upper plenum 138. Theresistor bore 142 is configured (e.g., with shape 157, FIG. 3B) toreceive the resistor 144 that has the exemplary shapes defined withrespect to FIGS. 3B, 4B, 5B, & 6B, so as to limit flow of the fluidthrough the resistor bore 142. Units 114 also include lower plenum 146extending along the length LH of the proximity head 106 and connected tothe resistor bore 142. The lower plenum 146 is configured to receivefluid from the resistor bore 142 as limited by the resistor 144. Theunits 114 are configured with the plurality of outlet ports 121 definedalong the length LH of the proximity head 106 and extending between thelower plenum 146 and the flat surfaces 126 of the head surface 124B.Fluid flowing in each separate unit 114 through the upper plenum 138,the resistor bore 142 (with the resistor 144) and the lower plenum 146is substantially conditioned to define a substantially uniform fluidoutflow from the plurality of outlet ports of that exemplary unit. Forexample, such outflow is the above-described value of Equation 1indicating that the flow rate of such fluid flowing through each suchport 121 of one of the units (e.g., 114-3) is substantially uniformrelative to the flow rates of fluid flowing in all of the other ports121 of the exemplary unit 114-3.

In further review, the apparatus 100 is described including structure(e.g., resistor unit 133) for conditioning fluid flow introduced intothe proximity head 106 for delivery to the surface 104 of the wafer 102.The proximity head 106 has the head surface 124B with the plurality offlat surfaces 126. The plurality of flat surfaces 126 are configured forplacement in the substantially parallel orientation with the surface 104of the wafer 102 (FIG. 1A). The apparatus 100 has been described asconfigured with units 114, each configured with the main inlet bore 132configured (as by 132-3) to initially receive a fluid to be provided tothe proximity head 106. The main inlet bore 132 extends along the lengthLH of the proximity head 106 for a distance comparable to LR (e.g., FIG.5A). The units 114 also include the plurality of vertical, or down, flowbores 134 having first ends 136 (FIG. 2B) connected to the main inletbore 132, the plurality of down flow bores 134 being spaced apart fromeach other along the length of the proximity head 106. The units 114also include the upper plenum 138 connected to second ends 140 of theplurality of down flow bores 134. Each down flow bore provides a feed ofthe fluid into the upper plenum 138, and the upper plenum 138 extendsalong the length LH of the proximity head 106. Units 114 include theresistor bore 142 extending along the length LH of the proximity head106 and connected to the upper plenum 138. The resistor bore 142 isconfigured (e.g., with shape 157, FIG. 3B) to receive the resistor 144that has the exemplary shapes defined with respect to FIGS. 3B, 4B, 5B,& 6B, to receive the resistor 144 so as to limit flow of the fluidthrough the resistor bore 142. Units 114 also include lower plenum 146extending along the length LH of the proximity head 106 and connected tothe resistor bore 142. The lower plenum 146 is configured to receivefluid from the resistor bore 142 as limited by the resistor 144. Theunits 114 are configured with the plurality of outlet ports 121 definedalong the length LH of the proximity head 106 and extending between thelower plenum 146 and the flat surfaces 126 of the head surface 124B.Fluid flowing in each separate unit 114 through the upper plenum 138,the resistor bore 142 (with the resistor 144) and the lower plenum 146is substantially conditioned to define a substantially uniform fluidoutflow from the plurality of outlet ports of that unit. For example,such outflow is the above-described value of Equation 1 indicating thatthe flow rate of such fluid flowing through each such port 121 of one ofthe units (e.g., 114-3) is substantially uniform relative to the flowrates of fluid flowing in all of the other ports 121 of the exemplaryunit 114-3.

In added review, the apparatus 100 also includes the configuration ofthe resistor bore 142 (FIG. 3B) with a central section 300 aligned withthe upper plenum 138 and with transverse sections 302 offsettransversely from the upper plenum 138. The resistor shape to limit flowof the fluid through the resistor bore 142 includes a width of theresistor 144 extending within the central section 300 and transversesections (e.g., 312), the resistor 144 being configured to divert thefluid received from the upper plenum 138 into the tortuous flow path 162extending transversely away from the central section 300 and terminatingin communication with the lower plenum 146.

Additionally, the configuration of the resistor 144 defines the tortuousflow path 162 including two transverse flow portions, one near extendingfrom the plenum 138, one extending to the lower plenum 146. These flowportions are separated by a flow portion 304 extending parallel to the Zaxis direction. Each of the respective upper and lower plenums 138 and146 of and the resistor 144 is configured with the cross-section 157related to the same longitudinal axis extending in the Z direction. Theupper plenum 138 and the lower plenum 146 and the resistor bore 142 arerespectively configured so that the respective cross-sections combine todefine the cross-shaped cross-section 157 in which those plenums areupright along that axis and the resistor bore 142 is between thoseplenums. The resistor bore 142 thus extends transversely relative tothat axis and transversely beyond the upright plenums 138 and 146. Inone embodiment (FIG. 3B) the shape of the resistor 144 includes agenerally flat-sided cross-section including the portions 164 extendingtransversely relative to the upright plenums 138 and 146. Thecross-section of portions 164 are spaced from the resistor bore 142 todefine the successive fluid flow paths 160. A first of the fluid flowpaths 160 (near plenum 138) defines an initial flow within the resistorbore 142 only transversely beyond the upright plenums. A next of thefluid flow paths 160 extends parallel to the Z axis direction, and afinal of the fluid flow paths 160 extends transversely toward the Z axisinto intersection with the second plenum 146.

Also in FIG. 3B the cross-section of the embodiment of resistor 144further includes the barrier surface 164 extending transversely relativeto the upright upper plenum 138. The barrier surface 164 is shown havinga first section 310 aligned with the upper plenum 138 (at centralsection 300 of bore 142). The barrier surface 164 also has the secondsection 312 transverse of the upper plenum and spaced from the resistorbore (at section 302 of bore 142) to define the slit 160 for receivingthe initial flow of fluid. In one embodiment shown in FIG. 6B, the firstbarrier surface section 310 (at section 300) is recessed (see recess144D) in a direction of the Z axis to divert fluid received from theupper plenum 138 into the slit 160 to establish the initial flow.

In further review, in another embodiment, the apparatus 100 may furtherinclude the first block (or part) 122A extending along the length LH ofthe proximity head 106, the first block 122A being configured with thefirst end 124S1 perpendicular to the length LH of the head 106 and withthe first fused region 196-1 extending perpendicular to the first end124S1. The first block 122A may be configured with the main bore 132 andthe resistor bore 144 extending through the first end 124S1 and with theportion 200 of the lower plenum 146 extending through the first fusionregion 196-1. The first block 122A is further configured with the upperplenum 138 accessible via the portion 200 of the lower plenum 146 andwith the plurality of vertical, or down, flow 134 bores accessible viathe upper plenum 138. The second block (or part) 122B may extend alongthe length LH of the proximity head 106, and is configured with thesecond end 124S2 perpendicular to the length LH of the head 106 and withthe second fused region 196-2 extending perpendicular to the second end124S2. The second block 122B is further configured with the plurality offlat surfaces 126 parallel to the second mating surface 122BM, thesecond block 122B being configured with the other portion 220 of thelower plenum 146 extending through the second fused region 196-2 andwith the plurality of outlet ports (including bores 148, FIG. 3A)extending through one of the flat surfaces 126. The first fused region196-1 of the first block 122A and the second fused region 196-2 of thesecond block 122B are joined to hold the first block 122A and the secondblock 122B fused together to define the one-piece block 122 having theportions 200 & 220 of the second plenum 146 aligned. In anotherembodiment, each of the first block 122 a and second block 122B may befurther separately configured from a single piece of PVDF, for example.Also, the resistor bore 142 may be sealed at the first end 124S1, andthe main bore 132 is configured with the blind end 132B opposite to thefirst end 124S1. In another embodiment shown in FIGS. 8A and 8B, theresistor 144P is shaped to fill the resistor bore 142. Also, theresistor 144P is configured from open cell porous material havinginterstices 250 through which the limited flow of fluid flows from theupper plenum 138 to the lower plenum 146.

In additional review of another embodiment, a proximity head 106 isprovided for defining a fluid transfer unit 114, the unit defining amain fluid flow and separate flows of fluid. The separate flows arerelative to the plurality of flat surfaces 126 of the head 106 to definethe meniscus 108 extending to the surface 104 of the wafer 102 so thatthe separate flows (e.g., relative to the ports 121 of the unit 114) aresubstantially uniform across the length LH of the head 106. Theplurality of flat surfaces 126 are configured for placement in asubstantially parallel orientation with respect to the surface 104 ofthe wafer 102. The proximity head 106 may include the block 122extending in the Y direction of the length LH and in the fluid transferdirection Z perpendicular to the length direction and in a widthdirection X perpendicular to the length and fluid transfer directions.The block 122 defines the plurality of flat surfaces 126. The head 106includes the main bore 132 configured in the block 122 to initiallyreceive the main fluid flow, the main bore 132 extending along thelength of the proximity head. A plurality of the separate flow bores 134are configured in the block 122 and have first ends 136 connected to themain bore 132. The plurality of separate flow bores 134 are spaced apartfrom each other along the length of the main bore 132 and have secondends 140. The upper plenum 138 is configured in the block 122 and isconnected to the second ends 140 of each of the separate flow bores 134to transfer the fluid flow relative to the separate flow bores 134. Theresistor unit 133, as a resistance or resistor device, is configuredwith the bore 142 extending in the block 122 along the length of andintersecting the upper plenum 138. The resistor (i.e., unit 133) isfurther configured with the flow restrictor (or resistor) 144 receivedin the resistor bore 142 to define at least the one tortuous path 162for fluid flow relative to the upper plenum 138. The lower plenum 146 isconfigured in the block 122 with an open top extending in the lengthdirection to transfer fluid relative to the tortuous fluid flow path162. The lower plenum 146 extends in the fluid transfer direction fromthe open top to the series of fluid outlets (shown as bores 148 andports 121) spaced across the length (or Y) direction. The outlet ports121 are configured in the block 122, one outlet port 121 being connectedto each respective fluid outlet 148 for transferring one of the separateflows of the fluid relative to the head 106. With respect to one unit114 that is defined in the block 122 of the embodiment described in thisparagraph, the separate flow relative to each outlet port 121 issubstantially uniform with respect to all of the flows from the outletports 121 of that one unit 114 across the length of the head 106.

In review of yet another embodiment, the upper plenum 138 and theresistor bore 142 and the lower plenum 146 in combination define thecross-shaped cross-section 157 with the resistor bore 142 extendingfurther in the width direction X than each of the respective upper andlower plenums 138 and 146 extend in the X direction. Also, the flowrestrictor 144 is received in the resistor bore 142 extending further inthe width (X) direction than each of the respective upper and lowerplenums 138 & 146 to define the at least one tortuous path 162 for fluidflow relative to the upper plenum 138 and to the lower plenum 146. Theresistor bore of this embodiment may be further configured with thebarrier 164 as a fluid diversion wall comprising the first section 312extending in the width (X) direction to a first terminus 324 (FIG. 3B)offset from the upper plenum 138. The fluid diversion wall furtherincludes the second section (along 304) extending from the firstterminus 324 in the fluid transfer direction to a second terminus 326.That wall further includes a third section 328 extending from the secondterminus 326 in the width (X) direction to a third terminus 330 adjacentto the lower plenum 146. The flow restrictor 144 received in theresistor bore 142 extends along the sections of the wall (along 302 &304) and as section 328, for defining the tortuous path 162 so as toextend successively along the first, second, and third sections torestrict the flow of fluid transferred relative to the outlet ports 121and to the main bore 132. In one embodiment (FIGS. 8A & 8B), the flowrestrictor 144 received in the resistor bore 142 is configured with opencell porous material comprising the interstices 250 that form theplurality of tortuous paths 162.

In review of still another embodiment, the configuration of the resistorbore 142 to transfer the fluid relative to the upper plenum 138 mayinclude (FIG. 3B) the central section 300 aligned with the upper plenum138 and the transverse section 302 offset transversely from the upperplenum 138. The open cell porous material may be received in the centralsection 300 and in the transverse section 302 so that the plurality oftortuous paths 250 are paths extending in the width (X) direction.

Reviewing another embodiment shown in FIG. 1C, the resistor bore 144 isfurther configured to extend in the width (X) direction beyond each ofthe respective first and second plenums 138 & 146 to define transverselyopposed grooves 330 offset in the width (X) direction from the plenums138 & 146. Each groove 330 has a cross section including a base 332extending in the fluid delivery (Z) direction and opposed transversewalls 334 extending in the width (X) direction and spaced by the base332. The resistor insert 144 may be configured for reception in one ofthe grooves 330 against the base 332 of the one groove. The resistorinsert 144 may be further configured to extend from the base 332 of theone groove 330 (left groove) into the other (right) groove 330 forreception in the other of the grooves spaced from the walls 334 and fromthe base 332 of the other (right) groove 330. The resistor insert 144thus defines a first transverse resistor fluid flow path (upper part ofpath 162) for fluid transfer only transversely relative to the firstplenum 138. The resistor insert 144 thus further defines a fluid flowpath (next part of path 162) in series with the first transverseresistor flow path and extending in the fluid delivery (Z) direction.The resistor insert 144 thus further defines a second transverseresistor flow path (lower part of path 162) for fluid transfer onlytransversely relative to the second plenum 146. The first transverseresistor flow path is thus between the upper plenum 138 and the fluiddirection (Z) flow path, and the second transverse resistor flow path isbetween the lower plenum 146 and the fluid direction flow path.

In review of yet one other embodiment each of the respective first andsecond plenums 138 and 146 is configured with a plenum width extendingin the width (X) direction, the plenum widths being equal. The resistorbore 142 extends in the length (Y) direction parallel to the main bore132 and to the upper plenum 138 and is configured with a resistor borewidth extending in the width (X) direction. The resistor bore width isgreater than the plenum width to define shoulders in the form of thesections 334 (FIG. 1C), one shoulder 334 being between the resistor bore142 and the respective upper plenum 138, another shoulder 334 beingbetween the resistor bore 142 and the lower plenum 146. The resistorbore 142 is further configured with the wall (or base) 332 (FIG. 1C)extending in the fluid transfer (Z) direction between the shoulders 334.The resistor insert 144 may be configured with a separate exteriorsurface (e.g., barrier surface 164) corresponding to each of theshoulders 334 and to the wall 330 of the resistor bore 142. The exteriorsurfaces 164 are configured to be received in the resistor bore 142 anddefine the thin generally-U-shaped continuous fluid transfer pathway (offlow path 162, FIG. 3B) extending within the resistor bore 142 andbetween the respective upper and lower plenums 138 & 146.

In one embodiment shown in FIGS. 2A & 3A, the block 122 is furtherconfigured to define a plurality of the fluid transfer units 114. Theplurality of units 114 are spaced across the width (X) direction and areseparate from each other as shown in FIGS. 2A & 3A.

In another embodiment, the proximity head 106 provides a plurality offluid transfer units 114, each unit 114 providing a main fluid flow, andproviding separate flows of fluid relative to the surface 104 of thewafer 102. The units cooperate to define the meniscus 108 extending fromthe proximity head 106 to the wafer surface 104 so that the separateflows are substantially uniform in each respective unit across thelength LH of the proximity head 106. The proximity head 106 may includethe block 122 defining the proximity head 106 extending in the length(Y) direction across the wafer surface 104 and in the fluid transfer (Z)direction and in the head width (X) direction. The block 122 may beconfigured with a of the first fluid transfer units 114 including themain bore 132 configured in the block 122 to transfer a main flow offluid, the main bore 132 extending along the head length LH. The block122 includes the upper plurality of flow channels 134 extending in theblock 122 in the fluid transfer (Z) direction and having first ends 136in fluid communion with the main bore 132. The upper channels 134 arespaced across the head length HL and have second ends 140 (FIG. 2B). Theupper plenum 138 is configured in the block 122 and is connected to thesecond ends 140 of each of the flow channels 134 to transfer fluid. Themain bore 132 and the upper plurality of flow channels 134 areconfigured to separate the main flow directly into a total number ofseparate flow paths (e.g., about 100 paths) that are between the mainbore 132 and the upper plenum 138. The resistor (in the form of theresistor unit 133) is configured with the resistor bore 142 extending inthe block 122 in the length (Y) direction to restrict transfer of fluidin the fluid transfer (Z) direction relative to the upper plenum 138.The resistor bore 142 is configured with the fluid diversion wall (FIG.1C) including the first section 334 extending transversely in the headwidth (X) direction; the second section 332 extending from the firstsection 334 in the fluid transfer (Z) direction; and a third section 334extending from the second section 332 parallel to the first section 334to a terminus 340 (FIG. 3B) aligned in the head width (X) direction withthe upper plenum 138. The lower plenum 146 is configured with an opentop extending along the head length LH in fluid communication with thethird section 334 (FIG. 1C) of the resistor 144. The lower plenum 146 isfurther configured extending in the fluid transfer (Z) direction fromthe open top to a series of fluid transfer ports (in the form of thefluid transfer bores 148) that are spaced evenly across the length(i.e., of the unit 114). The resistor 133 is further configured with aresistive insert (or resistor) 144 received in the bore 142 for definingthe thin flow path 162 along the first, second, and third sections 334and 332 of the wall of the bore 142 to resist fluid flow relative to theupper plenum 138 and relative to the lower plenum 146. The plurality offluid transfer ducts 148 are configured in the block 122, one duct 148being connected to each respective fluid transfer port 121 for providingone of the separate flows of the fluid relative to the surface 104 ofthe wafer 102. The separate flow of the fluid relative to each fluidtransfer duct of a unit is substantially uniform with respect to all ofthe other separate flows of the fluid provided by all of the other fluidtransfer ducts of the unit.

Also as described, the plurality of fluid transfer ducts 148 and theupper plurality of flow channels (or bores 134) define the only separateflows in the block 122 that are solely in the fluid transfer (Z)direction. In one embodiment, and for these separate Z direction flowsin the unit 114, the block 122 may thus include only the plurality ofbores 134 (the first set of the array) and only the plurality of bores148 (the second set of the array). Such bores 134 and 146 have beenreferred to as the plurality of arrays of fluid transfer units, and eachsuch array extends only in the fluid transfer direction of the Z axis,as shown in FIG. 2A, for example. Together, the bores 134 and 148 of oneunit 114 are the only bores of the unit 114 that define only separateflows in the block 122 that are solely in the fluid transfer (Z)direction.

In another embodiment, the block 122 is configured with main bore 132and the upper plurality of flow channels 134 according to the lowtolerances, and the block 122 is configured with the plenums 138 & 146 &the resistor units 114 and bores 148 according to the high tolerances.The block 122 is configured as a one-piece block, including the fusedregion 196.

In another embodiment, the proximity head 106 is characterized in thatthe main fluid flow (in the bore 132) is at a pressure that is lowrelative to a pressure of the separate flows relative to the fluidtransfer ducts 148 so that the flows of the fluid that are substantiallyuniform are flows into the fluid transfer ducts 148. The upper plenum138 and the resistor bore 142 and the lower plenum 146 in combinationdefine the cross-shaped cross-section 157 with the resistor bore 142extending further in the width (X) direction than the respective upperand lower plenums 138 and 146. The restrictor insert 144 received in theresistor bore 142 is configured to cooperate with the resistor bore 142to resist fluid flow from the lower plenum 146 and through the resistorbore 142 to the upper plenum 138 so that the separate fluid flow intoeach fluid transfer duct 148 is substantially uniform with respect toall of the other separate fluid flows into all of the other fluidtransfer ducts 148 of the first of the fluid transfer units 114.

In another embodiment, the main fluid flow (in the bore 132) is at apressure that is low relative to a pressure of the separate flowsrelative to the fluid transfer ducts 148 so that the flows of the fluidthat are substantially uniform are flows into the fluid transfer ducts148. The block 122 is configured with the first end surface 124S2extending in the width (X) direction and defining the corner 130 of theblock. The upper plenum 138 and the resistor bore 142 and the resistiveinsert 144 terminate spaced from an end surface, e.g., 124S2, to definea volume in the block 122 adjacent to the end surface 124S2 of the block122 and to the corner 130. The second fluid transfer unit (in the formof the exemplary unit 114-12 along face 124S2 when the exemplary unit is114-2, FIG. 7B) is configured in the volume and along the end surface124S2, the exemplary second unit 114-12 comprising a second lower plenum146-12, a second plurality of fluid transfer ducts 148-12, and a secondseries of ports 121-12. The resistive insert 144-12 is configured withthe low resistance fluid flow duct 180L (FIGS. 7A & 7C) extendingthrough the resistive insert 144-12 and thus by-passing the thin flowpath (or resistive flow space) 160 (FIG. 3B) to provide the low pressuredirectly to the second lower plenum 146-12 and to the second pluralityof fluid transfer ducts 148-12. The second fluid transfer ducts 148-12are configured (by varying lengths) to distribute the low pressure fromthe second lower plenum 146-12 to the ports 121-12 of the second unit114-12 to promote the substantially uniform fluid flow into all of thefluid transfer ducts 148-12 of the second unit 114-12.

In view of the above description and Figures, it may be understood thatthe above needs are met by the embodiments when the proximity head 106spans a Y direction distance more than the wafer diameter D, and whenthe wafer diameter D becomes larger and larger. The prior problems dueto (i) increase in the meniscus length LD in the Y direction (so as toprocess the entire wafer 102 in one relative motion between theproximity head 106 and the wafer 102), and (ii) increase the speed ofmovement of the wafer relative to the proximity head, may be overcome bythe substantial uniformity of flow rates described above. Thus, theidentified needs for a system for conditioning fluid flow introducedinto a proximity head for delivery to a surface of a wafer are met bythe proximity head 106. The proximity head 106 thus has the head surface124B with the plurality of flat surfaces 126. With the plurality of flatsurfaces 126 configured for placement in a substantially parallelorientation with the surface 104 of the wafer 102, in one embodimentfluid flowing for delivery to the wafer surface 104 is substantiallyconditioned to define the substantially uniform fluid outflow from theplurality of outlet ports 148 to the surface 126. In another embodiment,the proximity head 106 may define the main fluid flow in the main bore132 and may define the separate flows of fluid delivery to the wafersurface 104 in the ports 148 to define the meniscus 108 extending to thesurface 104 of the wafer 102, and the flow rates of the separate flowsof one unit 114 are substantially uniform across the head length LH ofthe head 106. In yet another embodiment, the main fluid flow may be atthe pressure that is low relative to the pressure of the separate flowsthat are into the fluid transfer ducts 148 of the proximity head 106.The flow resistor 144 is configured in the proximity head 106 to renderthe flow rates of the fluid in one unit 114 substantially uniform intothe fluid transfer bores 148 across the head.

For more information on the operation of the proximity head 106, e.g.,for the formation of the meniscus 104 and the application of themeniscus to the surface 104 of the substrate 102, reference may be madeto: (1) U.S. Pat. No. 6,616,772, issued on Sep. 9, 2003 and entitled“METHODS FOR WAFER PROXIMITY CLEANING AND DRYING,”; (2) U.S. patentapplication Ser. No. 10/330,843, filed on Dec. 24, 2002 and entitled“MENISCUS, VACUUM, IPA VAPOR, DRYING MANIFOLD,” (3) U.S. Pat. No.6,998,327, issued on Jan. 24, 2005 and entitled “METHODS AND SYSTEMS FORPROCESSING A SUBSTRATE USING A DYNAMIC LIQUID MENISCUS,” (4) U.S. Pat.No. 6,998,326, issued on Jan. 24, 2005 and entitled “PHOBIC BARRIERMENISCUS SEPARATION AND CONTAINMENT,” and (5) U.S. Pat. No. 6,488,040,issued on Dec. 3, 2002 and entitled “CAPILLARY PROXIMITY HEADS FORSINGLE WAFER CLEANING AND DRYING,” each is assigned to Lam ResearchCorporation, the assignee of the present application, and each isincorporated herein by reference.

For additional information regarding the functionality and constituentsof Newtonian and non-Newtonian fluids, reference can be made to: (1)U.S. application Ser. No. 11/174,080, filed on Jun. 30, 2005 andentitled “METHOD FOR REMOVING MATERIAL FROM SEMICONDUCTOR WAFER ANDAPPARATUS FOR PERFORMING THE SAME”; (2) U.S. patent application Ser. No.11/153,957, filed on Jun. 15, 2005, and entitled “METHOD AND APPARATUSFOR CLEANING A SUBSTRATE USING NON-NEWTONIAN FLUIDS”; and (3) U.S.patent application Ser. No. 11/154,129, filed on Jun. 15, 2005, andentitled “METHOD AND APPARATUS FOR TRANSPORTING A SUBSTRATE USINGNON-NEWTONIAN FLUID,” each of which is incorporated herein by reference.

The proximity head 106 and operations that manage and interface with thefluid supply and control parameters for the meniscus 108 may becontrolled in an automated way using computer control. Thus, aspects ofthe invention may be practiced with computer system configurationsincluding hand-held devices, microprocessor systems,microprocessor-based or programmable consumer electronics,minicomputers, mainframe computers and the like. The embodiments of thepresent invention may also be practiced in distributing computingenvironments where tasks are performed by remote processing devices thatare linked through a network.

For the automated control of the proximity head, and the systems thatconnect the proximity head, the embodiments may employ variouscomputer-implemented operations involving data stored in computersystems. These operations are those requiring physical manipulation ofphysical quantities. Usually, though not necessarily, these quantitiestake the form of electrical or magnetic signals capable of being stored,transferred, combined, compared, and otherwise manipulated. Further, themanipulations performed are often referred to in terms, such asproducing, identifying, determining, or comparing.

Any of the operations described herein that form part of the embodimentof the present invention are useful machine operations. The inventionalso relates to a device or an apparatus for performing theseoperations. The apparatus may be specially constructed for the requiredpurposes, or it may include a general purpose computer selectivelyactivated or configured by a computer program stored in the computer. Inparticular, various general purpose machines may be used with computerprograms written in accordance with the teachings herein, or it may bemore convenient to construct a more specialized apparatus to perform therequired operations.

The present invention can also implement computer readable code on acomputer readable medium. The computer readable medium is any datastorage device that can store data, which can thereafter be read by acomputer system. Examples of the computer readable medium include harddrives, network attached storage (NAS), read-only memory, random-accessmemory, CD-ROMs, CD-Rs, CD-RWs, DVDs, Flash, magnetic tapes, and otheroptical and non-optical data storage devices. The computer readablemedium can also be distributed over a network coupled computer systemsso that the computer readable code is stored and executed in adistributed fashion.

While this invention has been described in terms of several embodiments,it will be appreciated that those skilled in the art upon reading thepreceding specifications and studying the drawings will realize variousalterations, additions, permutations and equivalents thereof. Forexample, different numbers of units 114 may be provided and may beinterrelated in different ways, and still be within the true spirit andscope of the present invention. Therefore, it is intended that thepresent invention includes all such alterations, additions,permutations, and equivalents as fall within the true spirit and scopeof the invention. In the claims, elements and/or steps do not imply anyparticular order of operation, unless explicitly stated in the claims.

1. A method for making a proximity head for use in delivering fluids toa surface of a semiconductor wafer, comprising: forming a first blockfrom a plastic material, the first block extending a length that is atleast as large as a diameter of the semiconductor wafer; forming a mainbore in the first block, the main bore being aligned with the length;forming a plurality of upper intermediate bores in the first block, theplurality of upper intermediate bores being substantially perpendicularto the main bore and having a first ends connected to the main bore;forming a resistor bore in the first block, the resistor bore beingalong the length and parallel to the main bore, the resistor bore beingcoupled to the plurality of upper intermediate bores at second ends, theresistor bore configured to receive a resistor for impeding andcondition a flow of fluid introduced into the main bore; forming aplurality of lower intermediate bores in the first block, the pluralityof lower intermediate bores having first ends connected to the resistorbore; forming a fusing surface on the first block, the fusing surfaceexposing second ends of the plurality of lower intermediate bores;forming a second block with a fusing surface, the second block havingdelivery bores that communicate with the second ends of the plurality oflower intermediate bores of the first block; and fusing the first andsecond fusing surfaces of the first block and second block, the secondblock having a proximity surface that is opposite the fusing surface,such that the proximity surface is configured to be placed in proximityto a surface of the semiconductor wafer for substantially even flow offluid across the length.
 2. Apparatus for conditioning fluid flowingrelative to a surface of a proximity head in meniscus processing of awafer surface, the apparatus comprising: a first block configured with alength extending across an entire extent of the wafer surface, the blockcomprising: a main fluid transfer bore configured generally parallel tothe head surface across the block length; a resistor unit extendingsubstantially across the block length and configured between the mainbore and the head surface to impose a resistance on the fluid flowingrelative to the head surface between the main bore and the head surface;and a plurality of arrays of fluid transfer units, each array extendingonly in a fluid transfer direction, the plurality of arrays consistingof a first set of fluid transfer bores open to and between the main boreand the resistor unit and a second set of fluid transfer bores open toand between the resistor unit and the head surface so that the resistorunit substantially conditions the fluid flowing relative to the headsurface and between the main bore and the head surface and all acrossthe wafer surface, the conditioning providing for substantially evenflow out of the second set of fluid transfer bores across the length. 3.Apparatus as recited in claim 2, wherein: the main bore and the resistorunit and the arrays are configured to cause the fluid flow relative tothe head surface to be into the second set of fluid transfer bores andthrough the resistor unit and into the main bore; and the first andseconds sets of bores impose other resistances on the fluid flowing inthe respective first and seconds sets of bores, the other resistancesbeing less than the resistance imposed by the resistor unit. 4.Apparatus as recited in claim 2, wherein: the main bore and the resistorunit and the arrays are configured to cause the fluid flow relative tothe head surface to be from the main bore into the first set and throughthe resistor unit and through the second set past the head surface tothe wafer; and the first and seconds sets of bores impose otherresistances on the fluid flowing in the respective first and secondssets of bores, the other resistances being less than the resistanceimposed by the resistor unit.
 5. Apparatus as recited in claim 2,wherein the number of bores of the first set consists of fewer boresthan the number of bores of the second set.
 6. Apparatus as recited inclaim 2, further comprising a second block extending the length of thefirst block, the second block including bores that receive the secondset of fluid transfer bores of the first block, the second block havinga surface to be placed in proximity to the wafer surface, the meniscusdefinable between the surface of the second block and the wafer surface.7. An apparatus including structure for conditioning fluid flowintroduced into a proximity head for delivery to a surface of a wafer,the proximity head having a head surface with a plurality of surfaces,the apparatus comprising: a main inlet bore configured to initiallyreceive a fluid to be provided to the proximity head, the main inletbore extending along a length of the proximity head; a plurality of downflow bores having first ends connected to the main inlet bore, theplurality of down flow bores being spaced apart from each other alongthe length of the proximity head; an upper plenum connected to secondends of the plurality of down flow bores, each down flow bore providinga feed of the fluid into the upper plenum, the upper plenum extendingalong the length of the proximity head; a resistor bore extending alongthe length of the proximity head and being connected to the upperplenum, the resistor bore being configured to receive a resistor, theresistor having a shape so as to limit flow of the fluid through theresistor bore; a lower plenum extending along the length of theproximity head and being connected to the resistor bore, the lowerplenum being configured to receive fluid from the resistor bore aslimited by the resistor; and a plurality of outlet ports defined alongthe length of the proximity head and extending between the lower plenumand the flat surfaces of the head surface; wherein fluid flowing throughthe upper plenum, the resistor bore with the resistor and the lowerplenum is substantially conditioned to define a substantially uniformfluid outflow from the plurality of outlet ports onto the wafer. 8.Apparatus as recited in claim 7, wherein: the configuration of theresistor bore comprises a central section aligned with the upper plenumand transverse sections offset transversely from the upper plenum; andthe resistor shape to limit flow of the fluid through the resistor borecomprises a resistor width extending within the central and transverseresistor bore sections and configured to divert the fluid received fromthe upper plenum into a tortuous flow path extending transversely awayfrom the central section and terminating in communication with the lowerplenum.
 9. Apparatus as recited in claim 8, wherein the configuration ofthe resistor defines the tortuous flow path comprising two transverseflow portions separated by a flow portion parallel to the outlet ports.10. Apparatus as recited in claim 7, wherein: each of the upper andlower plenums and the resistor is configured with a cross-sectionrelated to a same longitudinal axis; the upper plenum and the lowerplenum and the resistor bore are respectively configured so that therespective cross-sections combine to define a cross-shaped cross-sectionin which the plenums are upright along the axis and the resistor bore isbetween the plenums, the resistor bore extends transversely relative tothe axis and transversely beyond the upright plenums; and the shape ofthe resistor comprises a generally flat-sided cross-section includingportions extending transversely relative to the upright plenums, thecross-section being spaced from the resistor bore to define successivefluid flow paths, a first of the fluid flow paths defining an initialflow within the resistor bore only transversely beyond the uprightplenums, a next of the fluid flow paths extending parallel to the axis,and a final of the fluid flow paths extending transversely toward theaxis into intersection with the second plenum.
 11. Apparatus as recitedin claim 10, wherein: the cross-section of the resistor furthercomprises a barrier surface extending transversely relative to theupright upper plenum, the barrier surface having a first section alignedwith the upper plenum, the barrier surface having a second sectiontransverse of the upper plenum and spaced from the resistor bore todefine a slit for receiving the initial flow, the first barrier surfacesection being recessed in a direction of the axis divert fluid receivedfrom the upper plenum into the slit to establish the initial flow. 12.Apparatus as recited in claim 7, wherein the apparatus furthercomprises: a first block extending along the length of the proximityhead, the first block being configured with a first end perpendicular tothe length of the head and with a first fused region extendingperpendicular to the first end, the first block being configured withthe main bore and the resistor bore extending through the first end andwith a portion of the lower plenum extending through the first fusionregion, the first block being further configured with the upper plenumaccessible via the portion of the lower plenum and with the plurality ofdown flow bores accessible via the upper plenum; and a second blockextending along the length of the proximity head, the second block beingconfigured with a second end perpendicular to the length of the head andwith a second fused region extending perpendicular to the second end,the second block being further configured with the plurality of flatsurfaces parallel to the second mating surface, the second block beingconfigured with another portion of the lower plenum extending throughthe second fused region and with the plurality of outlet ports extendingthrough one of the flat surfaces; the first fused region of the firstblock and the second fused region of the second block being joined tohold the first block and the second block fused together with theportions of the second plenum aligned.
 13. Apparatus as recited in claim12, wherein: each of the first and second blocks is further configuredfrom a single piece of PVDF; the resistor bore is sealed at the firstend; and the main bore is configured with a blind end opposite to thefirst end.
 14. Apparatus as recited in claim 7, wherein: the resistorshape fills the resistor bore; and the resistor is configured from opencell porous material having interstices through which the limited flowof fluid flows from the upper plenum to the lower plenum.
 15. Aproximity head for defining a main fluid flow and separate flows offluid, the separate flows being relative to a plurality of flat surfacesto define a meniscus extending to a surface of a wafer so that theseparate flows are substantially uniform across a length of the head,the plurality of flat surfaces being configured for placement in asubstantially parallel orientation with respect to the surface of thewafer, the proximity head comprising: a block extending in a directionof the length and in a fluid transfer direction perpendicular to thelength direction and in a width direction perpendicular to the lengthand fluid transfer directions, the block defining the plurality of flatsurfaces; a main bore configured in the block to initially receive amain fluid flow, the main bore extending along the length of theproximity head; a plurality of separate flow bores configured in theblock and having first ends connected to the main bore, the plurality ofseparate flow bores being spaced apart from each other along the lengthof the main bore and having second ends; an upper plenum configured inthe block and connected to the second ends of each of the separate flowbores to transfer the fluid flow relative to the separate flow bores; aresistor configured with a bore extending in the block along the lengthof and intersecting the upper plenum, the resistor being furtherconfigured with a flow restrictor received in the resistor bore todefine at least one tortuous path for fluid flow relative to the upperplenum; a lower plenum configured in the block with an open topextending in the length direction to transfer fluid relative to thetortuous fluid flow path, the lower plenum extending in the fluidtransfer direction from the open top to a series of fluid outlets spacedacross the length direction; and a plurality of outlet ports configuredin the block, one outlet port being connected to each respective fluidoutlet for transferring one of the separate flows of the fluid relativeto the head, the separate flow relative to one of the outlet ports beinguniform with respect to all of the flows from the other outlet portsacross the length of the head.
 16. A proximity head as recited in claim15, wherein the upper plenum and the resistor bore and the lower plenumin combination define a cross-shaped cross-section with the resistorbore extending further in the width direction than each of the upper andlower plenums; and the flow restrictor is received in the resistor boreextending further in the width direction than each of the upper andlower plenums to define the at least one tortuous path for fluid flowrelative to the upper plenum and the lower plenum.
 17. A proximity headas recited in claim 15, wherein: the resistor bore is further configuredwith a fluid diversion wall comprising a first section extending in thewidth direction to a first terminus offset from the upper plenum, thewall further comprising a second section extending from the firstterminus in the fluid transfer direction to a second terminus, the wallfurther comprising a third section extending from the second terminus inthe width direction to a third terminus adjacent to the lower plenum;and the flow restrictor received in the resistor bore extends along thesections of the wall for defining the tortuous path so as to extendsuccessively along the first, second, and third sections to restrict theflow of fluid transferred relative to the outlet ports and the mainbore.
 18. A proximity head as recited in claim 15, wherein the flowrestrictor received in the resistor bore is configured with open cellporous material comprising interstices that form a plurality of tortuouspaths.
 19. A proximity head as recited in claim 18, wherein: theconfiguration of the resistor bore to transfer the fluid relative to theupper plenum comprises a central section aligned with the upper plenumand a transverse section offset transversely from the upper plenum; andthe open cell porous material is received in the central section and thetransverse section so that the plurality of tortuous paths comprisespaths extending in the width direction.
 20. A proximity head as recitedin claim 15, wherein: the resistor bore is further configured to extendin the width direction beyond each of the respective first and secondplenums to define transversely opposed grooves offset in the widthdirection from the plenums, each groove having a cross sectioncomprising a base extending in the fluid delivery direction and opposedtransverse walls extending in the width direction and spaced by thebase; the resistor insert is configured for reception in one of thegrooves against the base of the one groove; and the resistor insert isfurther configured to extend from the base of the one groove into theother groove for reception in the other of the grooves spaced from thewalls and from the base of the other groove, the resistor insertdefining a first transverse resistor fluid flow path for fluid transferonly transversely relative to the first plenum, the resistor insertfurther defining a fluid flow path in series with the first transverseresistor flow path and extending in the fluid delivery direction, theresistor insert further defining a second transverse resistor flow pathfor fluid transfer only transversely relative to the second plenum, thefirst transverse resistor flow path being between the upper plenum andthe fluid direction flow path, and the second transverse resistor flowpath being between the lower plenum and the fluid direction flow path.